STWA40N95K5 datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STWA40N95K5

Description	N-channel 950 V, 0.110 Ω typ., 38 A MDmesh™ K5 Power MOSFET in a TO-247 long leads package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STWA40N95K5

Electrical ratings

DocID028207 Rev 1

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

IDM (1)

Drain current (pulsed)

152

PTOT

Total dissipation at TC = 25 °C

450

IAR

Max current during repetitive or single pulse avalanche

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID= 13 A, VDD= 50 V)

700

dv/dt (2)

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (3)

MOSFET dv/dt ruggedness

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Notes:

(1)Pulse width limited by safe operating area.

(2)ISD ≤ 19 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS.

(3)VDS ≤ 760 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.28

°C/W

Rthj-amb

Thermal resistance junction-amb max

°C/W

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