PM6675A datasheet(10/15 Pages) STMICROELECTRONICS

10 / 15 page

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Electrical characteristics

PM6675A

10/15

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

LDO Internal high-side MOSFET

RDS(on)

ILOUT = 1A, AVCC = 5V

0.2

0.23

Ω

ILDO,CL

LDO source current limit

VLFB < 1.10* VLREF , LILIM = 5V

22.1

2.2

VLFB < 1.10* VLREF, LILIM = 0V

11.1

1.2

LDO sink current limit

0.90* VLREF < VLFB < 1.10* VLREF,

LILIM = 5V

-2.2

-2.1

-2

0.90* VLREF < VLFB < 1.10* VLREF,

LILIM = 0V

-1.2

-1.1

-1

VLFB > 1.10* VLREF, LILIM = 5V

-1.2

-1.1

-1

VLFB > 1.10* VLREF, LILIM = 0V

-0.6

-0.55

-0.6

ILIN,BIAS

LDO input bias current, On

LEN connected to AVCC, no load

µA

LDO input bias current, Off

LEN = 0V, no load

ILFB,BIAS LFB input bias current

LEN connected to AVCC

VLFB = 0.6V

-1

ILFB,LEAK LFB leakage current

LEN = 0V, VLFB = 0.6V

-1

Power management section

VVTHVSEL VSEL pin thresholds

Fixed mode

4.3

Adjustable mode

3.7

VVTHNOS

KIP

NOSKIP pin thresholds (1)

Forced-PWM Mode

4.2

No-Audible Mode

1.0

3.5

Pulse-Skip Mode

0.5

VVTHLILIM LILIM pin thresholds (1)

±2A LDO Current Limit

2.4

±1A LDO Current Limit

0.8

IIN,LEAK

Logic input leakage current (1)

LEN, SWEN and LILIM=5V

µA

IIN3,LEAK Multilevel input leakage current (1) VSEL and NOSKIP=5V

IOSC,LEAK VOSC pin leakage current (1)

VOSC=1V

Thermal shutdown

TSHDN

Shutdown temperature (1)

150

°C

Guaranteed by design. Not production tested.

Table 5. Electrical characteristics (continued)

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