STM32F328C8 datasheet(70/109 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F328C8

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DocID026351 Rev 3

6.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 39. Flash memory characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA = –40 to +105 °C

53.5

µs

tERASE Page (2 KB) erase time

TA = –40 to +105 °C

tME

Mass erase time

TA = –40 to +105 °C

IDD

Supply current

Write mode

Erase mode

Table 40. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min.(1)

1. Data based on characterization results, not tested in production.

NEND

Endurance

TA = –40 to +85 °C (6 suffix versions)

TA = –40 to +105 °C (7 suffix versions)

kcycles

tRET

Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C

10 kcycles(2) at TA = 55 °C

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