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STM32F303C6 Datasheet(PDF) 99 Page - STMicroelectronics |
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STM32F303C6 Datasheet(HTML) 99 Page - STMicroelectronics |
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99 / 115 page ![]() DocID025083 Rev 5 99/115 STM32F303x6/x8 Electrical characteristics 100 Figure 32. OPAMP Voltage Noise versus Frequency en Voltage noise density @ 1KHz, Output loaded with 4 K Ω - 109 - @ 10KHz, Output loaded with 4 K Ω -43 - 1. Guaranteed by design, not tested in production. 2. The saturation voltage can also be limited by the Iload 3. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between OPAMP inverting input and ground. The PGA gain =1+R2/R1 4. Mostly TTa I/O leakage, when used in analog mode. Table 68. Operational amplifier characteristics(1) (continued) Symbol Parameter Condition Min. Typ. Max. Unit nV Hz ----------- |
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