STM32F398VE datasheet(87/151 Pages) STMICROELECTRONICS

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STM32F398VE

Electrical characteristics

142

Table 41. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)

1. Based on characterization, not tested in production

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

8THCLK– 1

8THCLK+1

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

tw(NOE)

FMC_NOE low time

8THCLK

8THCLK+ 1.5

th(NE_NOE)

FMC_NOE high to FMC_NE high hold

time

0.5

tv(A_NE)

FMC_NEx low to FMC_A valid

th(A_NOE)

Address hold time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

2 (NA)

th(BL_NOE)

FMC_BL hold time after FMC_NOE high

tsu(Data_NE)

Data to FMC_NEx high setup time

THCLK + 6

tsu(Data_NOE)

Data to FMC_NOEx high setup time

THCLK +7

th(Data_NOE)

Data hold time after FMC_NOE high

th(Data_NE)

Data hold time after FMC_NEx high

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

tw(NADV)

FMC_NADV low time

4THCLK +1.5

Table 42. Asynchronous non-multiplexed SRAM/PSRAM/NOR read-NWAIT timings(1)

1. Based on characterization, not tested in production

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

10THCLK

+0.5

10THCLK+ 1

tw(NOE)

FMC_NWE low time

6THCLK -1.5

6THCLK +2

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high 4THCLK +15

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4THCLK-3

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