STM32L496QGI3STR datasheet(153/263 Pages) STMICROELECTRONICS

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DocID029173 Rev 2

153/263

STM32L496xx

Electrical characteristics

236

6.3.8

Internal clock source characteristics

The parameters given in Table 58 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 22: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 58. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

TRIM

HSI16 user trimming step

Trimming code is not a

multiple of 64

0.2

0.3

0.4

Trimming code is a

multiple of 64

-4

-6

-8

DuCy(HSI16)(2) Duty Cycle

∆Temp(HSI16)

HSI16 oscillator frequency

drift over temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency

drift over VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

tsu(HSI16)(2)

HSI16 oscillator start-up

time

0.8

1.2

μs

tstab(HSI16)(2)

HSI16 oscillator

stabilization time

μs

IDD(HSI16)(2)

HSI16 oscillator power

consumption

155

190

μA

1. Guaranteed by characterization results.

2. Guaranteed by design.

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