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STM32L496QGI3STR Datasheet(PDF) 160 Page - STMicroelectronics

Part # STM32L496QGI3STR
Description  25 nA Shutdown mode
PDF  263 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L496QGI3STR Datasheet(HTML) 160 Page - STMicroelectronics

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Electrical characteristics
STM32L496xx
160/263
DocID029173 Rev 2
6.3.10
Flash memory characteristics
fPLL_P_OUT PLL multiplier output clock P
Voltage scaling Range 1
2.0645
-
80
MHz
Voltage scaling Range 2
2.0645
-
26
fPLL_Q_OUT PLL multiplier output clock Q
Voltage scaling Range 1
8
-
80
MHz
Voltage scaling Range 2
8
-
26
fPLL_R_OUT PLL multiplier output clock R
Voltage scaling Range 1
8
-
80
MHz
Voltage scaling Range 2
8
-
26
fVCO_OUT PLL VCO output
Voltage scaling Range 1
64
-
344
MHz
Voltage scaling Range 2
64
-
128
tLOCK
PLL lock time
-
-
15
40
μs
Jitter
RMS cycle-to-cycle jitter
System clock 80 MHz
-40
-
±ps
RMS period jitter
-
30
-
IDD(PLL)
PLL power consumption on
VDD(1)
VCO freq = 64 MHz
-
150
200
μA
VCO freq = 96 MHz
-
200
260
VCO freq = 192 MHz
-
300
380
VCO freq = 344 MHz
-
520
650
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the 3 PLLs.
Table 62. PLL, PLLSAI1, PLLSAI2 characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 63. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.69
90.76
µs
tprog_row
one row (32 double
word) programming time
normal programming
2.61
2.90
ms
fast programming
1.91
2.12
tprog_page
one page (2 Kbyte)
programming time
normal programming
20.91
23.24
fast programming
15.29
16.98
tERASE
Page (2 KB) erase time
-
22.02
24.47
tprog_bank
one bank (512 Kbyte)
programming time
normal programming
5.35
5.95
s
fast programming
3.91
4.35
tME
Mass erase time
(one or two banks)
-
22.13
24.59
ms



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