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ESDAULC6-1U2 Datasheet(PDF) 3 Page - STMicroelectronics |
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ESDAULC6-1U2 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() ESDAULC6-1U2 Characteristics Doc ID 023270 Rev 1 3/10 Figure 7. S21 attenuation measurement results Figure 3. Variation of leakage current versus junction temperature (typical values) Figure 4. Junction capacitance versus applied voltage (typical values) IR (nA) 0.01 0.10 1.00 10.00 100.00 25 50 75 100 125 150 Tj (°C) C(pF) 0 200 400 600 800 1000 1200 0 500 1000 1500 2000 2500 3000 VR (V) Figure 5. ESD response to IEC 61000-4-2 (+8 kV contact discharge) Figure 6. ESD response to IEC 61000-4-2 (-8 kV contact discharge) 20 V/div 84 V 24 V 20 V 17 V 20 ns/div V : ESD peak voltage V :clamping voltage @ 30 ns V :clamping voltage @ 60 ns PP CL CL V :clamping voltage @ 100 ns CL 1 1 2 2 3 4 4 3 20 V/div -90 V -12 V -10 V -5 V 20 ns/div V : ESD peak voltage V :clamping voltage @ 30 ns V :clamping voltage @ 60 ns PP CL CL V :clamping voltage @ 100 ns CL 1 1 2 2 3 4 4 3 S21 (dB) 100k 1M 10M 100M 1G 10G -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 F (Hz) Average Performance (50 Ω System) Pass band attenuation 0.05 dB -3 dB point 5.2 GHz Attenuation (0.8 – 4GHz) < 1.9 dB 0.1 dB @ 900 MHz 0.5 dB @ 1.8 GHz |
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