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M48T254V Datasheet(PDF) 10 Page - STMicroelectronics |
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M48T254V Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 24 page ![]() M48T254V 10/24 Figure 8. Memory READ Cycle Note: WE is high for a READ cycle. Figure 9. Memory WRITE Cycle, WRITE Enable Controlled Note: 1. OE = VIH or VIL. If OE = VIH during a WRITE cycle, the output buffers remain in a high impedance state. 2. If the CE low transition occurs simultaneously with or later than the WE low transition in WE Controlled WRITE, the output buffers remain in a high impedance state during this period. 3. If the CE high transition occurs simultaneously with the WE high transition, the output buffers remain in a high impedance state during this period. DQ0 - DQ7 ADDRESSES OE CE DATA OUTPUT VALID tOD tODO tOE tRC tCO tACC tCOE tCOE tOH AI04230 AI05655 DQ0–DQ7 ADDRESSES WE CE DATA IN STABLE tAH1 tOEW tDH1 tDS tWC tODW tWP tAW HIGH IMPEDANCE |
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