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SA58643 Datasheet(PDF) 4 Page - NXP Semiconductors

Part # SA58643
Description  Excellent overload capability
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

SA58643 Datasheet(HTML) 4 Page - NXP Semiconductors

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SA58643_1
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 20 November 2006
4 of 16
NXP Semiconductors
SA58643
Single-Pole Double-Throw (SPDT) switch
10. Static characteristics
[1]
The ENCH1 input must be connected to a valid logic level for proper operation of the SA58643.
11. Dynamic characteristics
[1]
The placement of the AC bypass capacitor is critical to achieve these specifications. See Section 13 “Application information” for more
details.
Table 5.
Static characteristics
VDD =+5V; Tamb =25 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD
supply current
40
170
300
µA
Vth
threshold voltage
TTL/CMOS logic
[1] 1.1
1.25
1.4
V
VIH
HIGH-level input voltage
logic 1 level; enable channel 1
2.0
-
VDD
V
VIL
LOW-level input voltage
logic 0 level; enable channel 2
−3.0
-
+0.8
V
IIL(ENCH1)
LOW-level input current on pin ENCH1
ENCH1 = 0.4 V
−10
+1
µA
IIH(ENCH1)
HIGH-level input current on pin ENCH1
ENCH1 = 2.4 V
−10
+1
µA
Table 6.
Dynamic characteristics
VDD =+5V; Tamb =25 °C; unless otherwise specified.
All measurements include the effects of the SA58643 evaluation board. Measurement system impedance is 50
Ω.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
|s21|2
insertion power gain
DC to 100 MHz
-
1
-
dB
500 MHz
-
1.4
-
dB
900 MHz
-
2
2.8
dB
|s12|2
isolation
10 MHz
[1] 70
80
-
dB
100 MHz
-
60
-
dB
500 MHz
-
50
-
dB
900 MHz
24
30
-
dB
|s22|2
output return loss
DC to 400 MHz
-
20
-
dB
900 MHz
-
12
-
dB
|s11|2
input return loss
DC to 400 MHz
-
17
-
dB
900 MHz
-
13
-
dB
td(off)
turn-off delay time
50 % TTL to (90 % to 10 %) RF
-
20
-
ns
tf(off)
turn-off fall time
90 % to 10 % RF
-
5
-
ns
tr(on)
turn-on rise time
10 % to 90 % RF
-
5
-
ns
Vtrt(p-p)
peak-to-peak transient voltage
switching transients
-
165
-
mV
PL(1dB)
output power at 1 dB gain compression
DC to 1 GHz
-
+18
-
dBm
IP3
third-order intercept point
100 MHz
-
+33
-
dBm
IP2
second-order intercept point
100 MHz
-
+52
-
dBm
NF
noise figure
Zo =50 Ω
100 MHz
-
1.0
-
dB
900 MHz
-
2.0
-
dB



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