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BQ40Z50-R2 Datasheet(PDF) 12 Page - Texas Instruments |
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BQ40Z50-R2 Datasheet(HTML) 12 Page - Texas Instruments |
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12 / 51 page ![]() 12 bq40z50-R2 SLUSCS4 – JUNE 2017 www.ti.com Product Folder Links: bq40z50-R2 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated ADC (continued) Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT (2) For VC1–VSS, VC2–VC1, VC3–VC2, VC4–VC3, VC4–VSS, PACK–VSS, and VREF1/2, the offset error is multiplied by (1/ADC multiplexer scaling factor (K)). Offset error(2) 16-bit, Post-calibration, VFS = VREF1 ±67 ±157 µV Offset error drift 16-bit, Post-calibration, VFS = VREF1 0.6 3 µV/°C Gain error 16-bit, –0.1 V to 0.8 × VFS ±0.2% ±0.8% FSR Gain error drift 16-bit, –0.1 V to 0.8 × VFS 150 PPM/°C Effective input resistance 8 MΩ 7.17 ADC Digital Filter Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Conversion time Single conversion 31.25 ms Single conversion 15.63 Single conversion 7.81 Single conversion 1.95 Resolution No missing codes 16 Bits Effective resolution With sign, tCONV = 31.25 ms 14 15 Bits With sign, tCONV = 15.63 ms 13 14 With sign, tCONV = 7.81 ms 11 12 With sign, tCONV = 1.95 ms 9 10 7.18 CHG, DSG FET Drive Typical values stated where TA = 25°C and VCC = 14.4 V, Min/Max values stated where TA = –40°C to 85°C and VCC = 2.2 V to 26 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Output voltage ratio RatioDSG = (VDSG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V, 10 MΩ between PACK and DSG 2.133 2.333 2.433 — RatioCHG = (VCHG – VBAT)/VBAT, 2.2 V < VBAT < 4.92 V, 10 MΩ between BAT and CHG 2.133 2.333 2.433 V(FETON) Output voltage, CHG and DSG on VDSG(ON) = VDSG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between PACK and DSG, VBAT = 18 V 10.5 11.5 12 V VCHG(ON) = VCHG – VBAT, VBAT ≥ 4.92 V, 10 MΩ between BAT and CHG, VBAT = 18 V 10.5 11.5 12 V(FETOFF) Output voltage, CHG and DSG off VDSG(OFF) = VDSG – VPACK, 10 MΩ between PACK and DSG –0.4 0.4 V VCHG(OFF) = VCHG – VBAT, 10 MΩ between BAT and CHG –0.4 0.4 tR Rise time VDSG from 0% to 35% VDSG(ON)(TYP), VBAT ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 200 500 µs VCHG from 0% to 35% VCHG(ON)(TYP), VBAT ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 200 500 tF Fall time VDSG from VDSG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF between DSG and PACK, 5.1 kΩ between DSG and CL, 10 MΩ between PACK and DSG 40 300 µs VCHG from VCHG(ON)(TYP) to 1 V, VBAT ≥ 2.2 V, CL = 4.7 nF between CHG and BAT, 5.1 kΩ between CHG and CL, 10 MΩ between BAT and CHG 40 200 |
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