2 / 12 page
11-196
RF2942
Rev A4 040115
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +3.6
VDC
Power Down Voltage (VPD)VCC+0.4
VDC
Input LO and RF Levels
+6
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Power Supply
Voltage
2.8
V
Specifications
2.0
3.6
V
Operating limits
Current
170
225
260
mA
10
24
mA
TXEN=0.0V
Carrier Input (LO IN)
T=25 °C, VCC=2.8V
Frequency Range
1800 to 1860
MHz
Power Level
-15
-6
dBm
Input Impedance
50
Ω
1830MHz
Modulation Input
Frequency Range
DC
2
10
MHz
50
Ω source, I,Q=400mV
p-p
Modulation for POUT
Power (I & Q)
400
mVP-P
Differential
Quadrature Phase Error
+2+5°
I/Q Amplitude Imbalance
0.2
dB
Input Impedance
>10
k
Ω
RF Output
T=25°C, VCC=2.8V, LO power=-6dBm,
SSB, I/Q=400mVP-P sine wave, 500kHz
Power Output
23
dBm
VCC=3.0V
21
22
27
dBm
VCC=2.8V
Second Harmonic Output
-20
-25
dBc
Third Harmonic Output
-35
-45
dBc
Sideband Suppression
-25
-40
dBc
Carrier Suppression
-25
dBc
Modulation DC offset can be externally
adjusted for optimum suppression. Carrier
suppression is then typically better than
40dB.
Broadband Noise Floor
-90
dBm/Hz
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
