BLF548 datasheet(11/15 Pages) PHILIPS

11 / 15 page

2003 Sep 26

Philips Semiconductors

Product speciﬁcation

UHF push-pull power MOS transistor

BLF548

Fig.13 Input impedance as a function of frequency

(series components); typical values per

section.

Class-B operation; VDS = 28 V; IDQ = 160 mA (per section);

PL = 150 W (total device).

handbook, halfpage

−1

−2

−3

−4

150

250

350

450

550

f (MHz)

(Ω)

MRA528

Fig.14 Load impedance as a function of frequency

(series components); typical values per

section.

Class-B operation; VDS =28V; IDQ = 160 mA (per section);

PL = 150 W (total device).

handbook, halfpage

150

250

350

450

550

f (MHz)

MRA530

(Ω)

Fig.15 Definition of MOS impedance.

handbook, halfpage

MBA379

Fig.16 Power gain as a function of frequency;

typical values per section.

Class-B operation; VDS =28V; IDQ = 160 mA (per section);

PL = 150 W (total device).

handbook, halfpage

150

250

350

450

550

f (MHz)

(dB)

MRA526

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