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UCC24612

SLUSCM5 – AUGUST 2017

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Copyright © 2017, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

Input voltages more negative than indicated may exist on any listed pin without excess stress or damage to the device if the pin’s input

current magnitude is limited to less than -10mA.

(3)

In normal use, VG is connected to the gate of a power MOSFET through a small resistor. When used this way, VG current is limited by

the UCC24612 and no absolute maximum output current considerations are required. The series resistor shall be selected to minimize

overshoot and ringing due to series inductance of the VG output and power-MOSFET gate-drive loop. Continuous VG current is subject

to the maximum operating junction temperature limitation.

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

MAX

UNIT

VDD

–0.3

30

V

VD

–0.7

230

V

VG

–0.3

V

–1.0

230

V

REG

12

V

Output current, peak

±4

A

Operating junction temperature

–40

125

°C

Storage temperature

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD Ratings

VALUE

UNIT

Electrostatic discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins,

±2,000

V

±1,500

V

Charged device model (CDM), per JEDEC specification JESD22-C101,

±500

V