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LTC2413IGN Datasheet(PDF) 27 Page - Linear Technology |
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LTC2413IGN Datasheet(HTML) 27 Page - Linear Technology |
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27 / 44 page ![]() LTC2413 27 sn2413 2413fs APPLICATIO S I FOR ATIO Reference Current In a similar fashion, the LTC2413 samples the differential reference pins REF+ and REF– transfering small amount of charge to and from the external driving circuits, thus produces a dynamic reference current. This current does not change the converter offset but it may degrade the gain and INL performance. The effect of this current can be analyzed in the same two distinct situations. For relatively small values of the external reference capaci- tors (CREF < 0.01µF), the voltage on the sampling capacitor settles almost completely and relatively large values for the source impedance result in only small errors. Such values for CREF will deteriorate the converter offset and gain performance without significant benefits of reference filtering and the user is advised to avoid them. Larger values of reference capacitors (CREF > 0.01µF) may be required as reference filters in certain configurations. Such capacitors will average the reference sampling charge and the external source resistance will see a quasi con- stant reference differential impedance. When internal os- cillator is used (FO = LOW), the typical differential input resistance is 1.43M Ω which will generate a gain error of approximately 0.35ppm for each ohm of source resis- tance driving REF+ or REF–. When FO is driven by an external oscillator with a frequency fEOSC (external conver- sion clock operation), the typical differential reference resistance is 0.20 • 1012/fEOSCΩ and each ohm of source resistance drving REF+ or REF– will result in 2.47 • 10–6 • fEOSCppm gain error. The effect of the source resistance on the two reference pins is additive with respect to this gain error. The typical +FS and –FS errors for various combinations of source resistance seen by the REF+ and REF– pins and external capacitance CREF con- nected to these pins are shown in Figures 23, 24, 25 and 26. In addition to this gain error, the converter INL perfor- mance is degraded by the reference source impedance. When internal oscillator is used(FO = LOW), every 100Ω of source impedance driving REF+ or REF– translates into about 1.2ppm additional INL error. When FO is driven by an external oscillator with a frequency fEOSC, every 100Ω of source resistance driving REF+ or REF– translates into about 8.73 • 10–6 • fEOSCppm additional INL error. Figure 20. +FS Error vs RSOURCE at IN + or IN– (Large CIN) Figure 21. –FS Error vs RSOURCE at IN+ or IN– (Large CIN) Figure 22. Offset Error vs Common Mode Voltage (VINCM = IN+ = IN–) and Input Source Resistance Imbalance ( ∆RIN = RSOURCEIN+ – RSOURCEIN–) for Large CIN Values (CIN ≥ 1µF) RSOURCE (Ω) 0 100 200 300 400 500 600 700 800 900 1000 2413 F19 300 240 180 120 60 0 VCC = 5V REF+ = 5V REF – = GND IN+ = 3.75V IN– = 1.25V FO = GND TA = 25°C CIN = 0.01µF CIN = 0.1µF CIN = 1µF, 10µF RSOURCE (Ω) 0 100 200 300 400 500 600 700 800 900 1000 2413 F21 0 –60 –120 –180 –240 –300 VCC = 5V REF+ = 5V REF – = GND IN+ = 1.25V IN– = 3.75V FO = GND TA = 25°C CIN = 0.01µF CIN = 0.1µF CIN = 1µF, 10µF VINCM (V) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2413 F22 120 100 80 60 40 20 0 –20 –40 –60 –80 –100 –120 FO = GND TA = 25°C RSOURCEIN– = 500Ω CIN = 10µF VCC = 5V REF+ = 5V REF – = GND IN+ = IN– = VINCM A: ∆RIN = +400Ω B: ∆RIN = +200Ω C: ∆RIN = +100Ω D: ∆RIN = 0Ω E: ∆RIN = –100Ω F: ∆RIN = –200Ω G: ∆RIN = –400Ω A B C D E F G |
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