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VPS2535H Datasheet (PDF) - STMicroelectronics
VPS2535H Datasheet PDF - STMicroelectronics
Part # VPS2535H
Download  VPS2535H Download
File Size   634.52 Kbytes
Page   30 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Double channel high-side driver with analog current sense

VPS2535H Datasheet (PDF)

Go To PDF Page Download Datasheet
VPS2535H Datasheet PDF - STMicroelectronics

Part # VPS2535H
Download  VPS2535H Click to download

File Size   634.52 Kbytes
Page   30 Pages
Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics
Description Double channel high-side driver with analog current sense

VPS2535H Datasheet (HTML) - STMicroelectronics


VPS2535H Product details

Description
The VPS2535H is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to ground. Active VCC

Features
■ General – Very low standby current – 3.0 V CMOS compatible input – Optimized electromagnetic emission – Very low electromagnetic susceptibility – Fault reset standby pin (FR_Stby)
■ Diagnostic functions – Proportional load current sense – High current sense precision for wide range currents – Off-state open load detection – Output short to VCC detection – Overload and short to ground latch off –




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About STMicroelectronics

STMicroelectronics is a multinational electronics and semiconductor manufacturer based in Geneva, Switzerland.

The company offers a wide range of products including microcontrollers, sensors, power amplifiers, and integrated circuits for various applications in the automotive, industrial, and consumer markets.

Founded in 1987, STMicroelectronics has operations in over 100 countries and is one of the largest semiconductor companies in the world.

*This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.




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