DAP018A/B/C/D/F

http://onsemi.com

7

ELECTRICAL CHARACTERISTICS

(For typical values TJ = 25°C, for min/max values TJ = −25°C to +125°C, Max TJ = 150°C, VCC = 12 V unless otherwise noted)

INTERNAL RAMP COMPENSATION

Symbol

Rating

Pin

Min

Typ

Max

Unit

Vramp

Internal ramp level @ 25°C (Note 2)

7

3.0

V

Rramp

Internal ramp resistance to CS pin (Note 2)

7

20

kW

PROTECTIONS

Symbol

Rating

Pin

Min

Typ

Max

Unit

Vlatch

Latching level input

2

2.85

3

3.25

V

Tlatch−del Delay before latch confirmation

−

20

ms

VtimFault Timer level completion

3

4.3

V

Itim

Timer capacitor charging current

3

12

mA

TimerL

Timer length, Ctimer = 0.22 mF typical

3

100

ms

VBO

Brown−Out level – B & D versions

11

0.95

1

1.05

V

IBO

Hysteresis current, Vpin 11 < VBO – B & D versions, TJ = 25°C

11

9

10

11

mA

IBO

Hysteresis current, Vpin 11 < VBO – B & D versions, −25°C < TJ < 25°C

11

8.6

10

11

mA

IBObias

Brown−Out input bias current – B & D versions

11

0.02

mA

TBO−del

Delay before brown−out confirmation

−

20

ms

IOTP

Over temperature shutdown current (Note 3)

12

101

113

124

mA

VOTP

Over temperature latching voltage (Note 3)

12

0.95

1

1.05

V

TSD

Temperature shutdown

−

140

°C

TSD_hys

Temperature shutdown hysteresis

−

40

°C

1. See characterization table for linearity over negative bias voltage.

2. Guaranteed by design.

3. The OTP parameters are selected to cope with a TTC03−474 which offers a resistance of 8.8 kW when heated to a temperature of 110°C.

4. The brown−out circuitry is disabled on versions A & C and operates on versions B & D.