4

LM5007

SNVS252H – SEPTEMBER 2003 – REVISED NOVEMBER 2018

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Copyright © 2003–2018, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

(1).

MIN

MAX

UNIT

VIN to RTN

80

V

BST to RTN

94

V

SW to RTN (steady state)

–1

V

BST to VCC

80

V

BST to SW

14

V

VCC to RTN

14

V

All other inputs to RTN

–0.3

7

V

Lead temperature (soldering 4 sec)

260

°C

Tstg

Storage temperature

–55

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

The human body model is a 100-pF capacitor discharge through a 1.5-k

Ω resistor into each pin. The machine model is a 200-pF

capacitor discharged directly into each pin. The machine model ESD compliance level for Pin 5 is 150 V. The human body ESD

compliance level for Pin 7 and 8 is 1000 V.

6.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2)

±2000

V

Machine model (MM)

±200

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).

MIN

NOM

MAX

UNIT

VIN

Input voltage

9

75

V

TJ

Junction temperature

−40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report (SPRA953).

6.4 Thermal Information

THERMAL METRIC(1)

LM5007

UNIT

DGK (VSSOP)

NGT (WSON)

8 PINS

8 PINS

RθJA

Junction-to-ambient thermal resistance

158.3

38.1

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

51.3

27.8

°C/W

RθJB

Junction-to-board thermal resistance

78.5

15.1

°C/W

ψJT

Junction-to-top characterization parameter

4.9

0.2

°C/W

ψJB

Junction-to-board characterization parameter

77.2

15.3

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

4.5

°C/W