AS1163 Marking, Q65113A6575 datasheet(21/91 Pages) AMSOSRAM

21 / 91 page

AS1163

Functional description

Datasheet • PUBLIC • Document Feedback

DS001075 • v2-00 • 2025-Nov-21

21 / 91

6.2.1

OTP burn procedure

OTP required voltage@25°C: 2.7V ± 100mV, additionally a 10µF bypass capacitor is required

on VDD.

To program the OTP customer section (from address 0x0D to 0x1F), the following steps must

be followed, once the device is accessible via a dedicated command:

Reset/init

Settestpw

Setotp

Cust

Burn

Lower voltage (within 15µs)

Wait 5ms

Raise voltage

Idle

10. settestpw(0)

Based on qualification data of the pfuse OTP element, a burning yield loss of typically around

3ppm/bit has to be considered while using the specified optimum burn conditions. Furthermore

any burning yield loss higher than 50ppm/bit is an indicator that for some reasons the burning

conditions are not in the optimum qualified range. To verify the correctness of burned values:

Write different data to OTP (e.g. all OTP bytes at 0x1A1A)

Send CUST command

Send GLOAD command (optional, only for GLOAD check)

Send LOAD command

Send IDLE command

Read back all OTP and verify the burned values

Once the bit 1F.7 (Cust_lock) is 1, the OTP can no longer be changed

AS1163 Marking, Q65113A6575 Datasheet(PDF) 21 Page - ams-OSRAM AG