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G4PC50W Marking, IRG4PC50W Datasheet(PDF) 5 Page - International Rectifier

Part # IRG4PC50W
Description  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC50W Datasheet(HTML) 5 Page - International Rectifier

  IRG4PC50W Datasheet HTML 1Page - International Rectifier IRG4PC50W Datasheet HTML 2Page - International Rectifier IRG4PC50W Datasheet HTML 3Page - International Rectifier IRG4PC50W Datasheet HTML 4Page - International Rectifier IRG4PC50W Datasheet HTML 5Page - International Rectifier IRG4PC50W Datasheet HTML 6Page - International Rectifier IRG4PC50W Datasheet HTML 7Page - International Rectifier IRG4PC50W Datasheet HTML 8Page - International Rectifier  
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IRG4PC50W
www.irf.com
5
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
J
°

R
= Ohm
V
= 15V
V
= 480V
G
GE
CC

I =
A
54
C

I =
A
27
C

I =
A
13.5
C
0
10
20
30
40
50
0.0
1.0
2.0
3.0
R
, Gate Resistance (Ohm)
G

V
= 480V
V
= 15V
T
= 25
C
I
= 27A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
40
80
120
160
200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G

V
= 400V
I
= 27A
CC
C
5.0
Ω
1
10
100
0
2000
4000
6000
8000
V
, Collector-to-Emitter Voltage (V)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc

Cies

Coes

Cres
RG , Gate Resistance ( Ω )



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