G4PC50W Marking, IRG4PC50W datasheet(1/8 Pages) IRF

Part #	IRG4PC50W

Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.30V, @Vge=15V, Ic=27A)

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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Parameter

Max.

Units

VCES

Collector-to-Emitter Breakdown Voltage

600

V

IC @ TC = 25°C

Continuous Collector Current

55

IC @ TC = 100°C

Continuous Collector Current

27

A

ICM

Pulsed Collector Current

Q

220

ILM

Clamped Inductive Load Current

R

220

VGE

Gate-to-Emitter Voltage

± 20

V

EARV

Reverse Voltage Avalanche Energy

S

170

mJ

PD @ TC = 25°C

Maximum Power Dissipation

200

PD @ TC = 100°C

Maximum Power Dissipation

78

TJ

Operating Junction and

-55 to + 150

TSTG

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm from case )

°C

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

IRG4PC50W

INSULATED GATE BIPOLAR TRANSISTOR

PD - 91657B

E

C

G

n-channel

TO-247AC

Features

• Designed expressly for Switch-Mode Power

Supply and PFC (power factor correction)

applications

• Industry-benchmark switching losses improve

efficiency of all power supply topologies

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

tighter parameters distribution, exceptional reliability

• Lower switching losses allow more cost-effective

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

• Of particular benefit to single-ended converters and

boost PFC topologies 150W and higher

• Low conduction losses and minimal minority-carrier

recombination make these an excellent option for

resonant mode switching as well (up to >300 kHz)

Benefits

VCES = 600V

VCE(on) max.

= 2.30V

@VGE = 15V, IC = 27A

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

–––

0.64

RθCS

Case-to-Sink, Flat, Greased Surface

0.24

–––

°C/W

RθJA

Junction-to-Ambient, typical socket mount

–––

40

Wt

Weight

6 (0.21)

–––

g (oz)

Thermal Resistance

Absolute Maximum Ratings

W

2/7/2000

www.irf.com

1

Similar Description - IRG4PC50W

Manufacturer	Part #	Datasheet	Description
International Rectifier	IRG4BC20U	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
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	IRG4BC40F	167Kb / 8P	INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A)
	IRG4BC40U	169Kb / 8P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
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	IRGBC40F	248Kb / 6P	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
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