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TLE4998S8 Datasheet(PDF) 8 Page - Infineon Technologies AG

Part # TLE4998S8
Description  High Performance Programmable Single/Dual Linear Hall Sensor
PDF  24 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

TLE4998S8 Datasheet(HTML) 8 Page - Infineon Technologies AG

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TLE4998S8(D)
Maximum Ratings
Data Sheet
8
Revision1.1,2017-07
3
Maximum Ratings
All further given specifications are regarded to each of the implemented sensors IC’s, or otherwise noted.
Attention: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification
is not implied. Furthermore, only single error cases are assumed. More than one stress/error
case may also damage the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. During absolute maximum rating overload conditions the voltage on VDD pins with
respect to ground (VSS) must not exceed the values defined by the absolute maximum ratings.
Table 3-1
Absolute Maximum Ratings
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Junction temperature
TJ
- 40
1601)
1) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please aks Infineon for support.
°C
Voltage on
V
DD pin with respect to
ground
VDD
-18
18.35
V
2)3)
2) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases,
R
series
≥100 Ω for current limitation is required.
3) Max 1h, in operating temperature range.
Supply current @ overvoltage
V
DD max. IDDov
––15
mA
Reverse supply current @
V
DD min.
IDDrev
-1
0
mA
Voltage on output pin with respect to
ground
VOUT
-14)
4)
I
DD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature).
18.355)
5)
V
DD = 5 V, open drain permanent low, for max. 10 minutes
V–
Magnetic field
BMAX
-–
1
T
ESD protection
VESD
±2
kV
According HBM
ANSI/ESDA/JEDEC
JS-001



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