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TLE4998S8 Datasheet(PDF) 8 Page - Infineon Technologies AG |
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TLE4998S8 Datasheet(HTML) 8 Page - Infineon Technologies AG |
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8 / 24 page ![]() TLE4998S8(D) Maximum Ratings Data Sheet 8 Revision1.1,2017-07 3 Maximum Ratings All further given specifications are regarded to each of the implemented sensors IC’s, or otherwise noted. Attention: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Furthermore, only single error cases are assumed. More than one stress/error case may also damage the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. During absolute maximum rating overload conditions the voltage on VDD pins with respect to ground (VSS) must not exceed the values defined by the absolute maximum ratings. Table 3-1 Absolute Maximum Ratings Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Junction temperature TJ - 40 – 1601) 1) For limited time of 96 h. Depends on customer temperature lifetime cycles. Please aks Infineon for support. °C – Voltage on V DD pin with respect to ground VDD -18 – 18.35 V 2)3) 2) Higher voltage stress than absolute maximum rating, e.g. 150% in latch-up tests is not applicable. In such cases, R series ≥100 Ω for current limitation is required. 3) Max 1h, in operating temperature range. Supply current @ overvoltage V DD max. IDDov ––15 mA – Reverse supply current @ V DD min. IDDrev -1 – 0 mA – Voltage on output pin with respect to ground VOUT -14) 4) I DD can exceed 10 mA when the voltage on OUT is pulled below -1 V (-5 V at room temperature). – 18.355) 5) V DD = 5 V, open drain permanent low, for max. 10 minutes V– Magnetic field BMAX -– 1 T – ESD protection VESD – – ±2 kV According HBM ANSI/ESDA/JEDEC JS-001 |
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