BFP196WN datasheet(5/19 Pages) INFINEON

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Electrical performance in test fixture

3.1

DC parameter table

Table 3

DC characteristics at TA = 25 °C

Parameter

Symbol

Values

Unit

Note or Test Condition

Min.

Typ.

Max.

Collector emitter breakdown voltage

VCEO

–

IC = 1 mA, open base

Collector emitter leakage current

ICES

–

100

μA

VCE = 20 V, VBE = 0 V

Emitter / base short

circuited

Collector base leakage current

ICBO

–

100

VCB = 10 V, VBE = 0

Open emitter

Emitter base leakage current

IEBO

–

μA

VEB = 1 V, IC = 0

Open collector

DC current gain

hFE

100

140

VCE = 8 V, IC = 50 mA

Pulse measured

3.2

AC parameter tables

Table 4

General AC characteristics at TA = 25 °C

Parameter

Symbol

Values

Unit

Note or test condition

Min.

Typ.

Max.

Transition frequency

7.5

–

GHz

VCE = 8 V, IC = 90 mA,

f=500 MHz

Collector base capacitance

CCB

–

0.9

–

VCB = 10 V, VBE = 0 V,

f = 1 MHz

Emitter grounded

Collector emitter capacitance

CCE

–

0.35

–

VCE = 10 V, VBE = 0 V,

f = 1 MHz

Base grounded

Emitter base capacitance

CEB

–

3.8

–

VEB = 0.5 V, VCB = 0 V,

f = 1 MHz

Collector grounded

BFP196WN

Low noise silicon bipolar RF transistor

Electrical performance in test fixture

Preliminary datasheet

Revision 1.0

2017-01-20

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