BFP196WN datasheet(7/19 Pages) INFINEON

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Table 7

AC characteristics, VCE = 8 V, f = 1.5 GHz

Parameter

Symbol

Values

Unit

Note or test condition

Min.

Typ.

Max.

Power gain

Maximum power gain

Transducer gain

Gms

|S21|2

–

12.5

8.5

–

IC = 50 mA

Zs = ZSopt, ZL = ZLopt

ZS=ZL=50 Ω

Minimum noise figure

NFmin

–

1.7

–

IC = 20 mA, ZS = ZSopt

Linearity

1 dB compression point at output

3rd order intercept point at output

OP1dB

OIP3

–

dBm IC = 50 mA

ZS=ZL=50 Ω

Table 8

AC characteristics, VCE = 8 V, f =1.9 GHz

Parameter

Symbol

Values

Unit

Note or test condition

Min.

Typ.

Max.

Power gain

Maximum power gain

Transducer gain

Gms

|S21|2

–

6.5

–

IC = 50 mA

Zs = ZSopt, ZL = ZLopt

ZS=ZL=50 Ω

Minimum noise figure

NFmin

–

2.1

–

IC = 20 mA, ZS = ZSopt

Linearity

1 dB compression point at output

3rd order intercept point at output

OP1dB

OIP3

–

dBm IC = 50 mA

ZS=ZL=50 Ω

Table 9

AC characteristics, VCE = 5 V, f = 2.4 GHz

Parameter

Symbol

Values

Unit

Note or test condition

Min.

Typ.

Max.

Power gain

Maximum power gain

Transducer gain

Gms

|S21|2

–

9.7

4.8

–

IC = 50 mA

Zs = ZSopt, ZL = ZLopt

ZS=ZL=50 Ω

Minimum noise figure

NFmin

–

2.5

–

IC = 20 mA, ZS = ZSopt

Linearity

1 dB compression point at output

3rd order intercept point at output

OP1dB

OIP3

–

dBm IC = 50 mA

ZS=ZL=50 Ω

BFP196WN

Low noise silicon bipolar RF transistor

Electrical performance in test fixture

Preliminary datasheet

Revision 1.0

2017-01-20

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