BFP196WN

Low noise silicon bipolar RF transistor

Product description

• NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion

wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and

combines ease-of-use to stable volumes production, at benchmark quality and reliability.

Features

• Easy to use Pb-free (RoHS compliant) and halogen-free industry

standard SOT343 package with visible leads

2

3

1, 4

Application

• GNSS active antenna

• Amplifiers in antenna and telecommunications systems

• CATV

• Power amplifier for DECT and PCN systems

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Device information

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Type / Ordering code

Package

Pin configuration

Marking

Related Links

BFP196WN /

BFP196WNH6327XTSA1

SOT343

1=E

2=C 3=B 4=E

RLs

see SOT343 Package

Preliminary datasheet

Please read the Important Notice and Warnings at the end of this document

Revision 1.0

www.infineon.com

2017-01-20