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MP6538GV Datasheet(PDF) 4 Page - Monolithic Power Systems

Part # MP6538GV
Description  100V, Three-Phase, BLDC Motor Pre-Driver with Hall Signal Interface
PDF  14 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6538GV Datasheet(HTML) 4 Page - Monolithic Power Systems

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MP6538 – 100V, THREE-PHASE, BLDC MOTOR PRE-DRIVER WITH HALL SIGNAL INTERFACE
MP6538 Rev. 1.01
www.MonolithicPower.com
4
4/20/2018
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2018 MPS. All Rights Reserved.
ELECTRICAL CHARACTERISTICS
VIN = 48V, VREG = 12V, TA = 25°C, unless otherwise noted.
Parameter
Symbol
Condition
Min
Typ
Max
Units
Power Supply
Input supply voltage
VIN
8
100
V
LDO output voltage
VLDO
ILDO ≤ 5mA, VIN > 15V
10.8
12
13.2
V
Gate driver supply voltage
VREG
8.5
14
V
Quiescent current
I
Q
nSLEEP = 1, not switching
0.7
mA
I
SLEEP
nSLEEP = 0
1
µA
Control Logic
Input logic low threshold
VIL
0.8
V
Input logic high threshold
VIH
2
V
Logic input current
IIN(H)
VIH = 0.8V
-2.4
2.4
µA
IIN(L)
VIL = 5V
-14
14
µA
nSLEEP pull-down resistance
RSLEEP-PD
450
k
Internal pull-down resistance
R
PD
450
k
Fault Output (Open-Drain Output)
Output low voltage
VOL
IO = 5mA
0.1
V
Output high leakage current
IOH
VO = 3.3V
1
µA
Protection Circuit
VREG UVLO rising threshold
V
REG_RUVLO
6.5
7.5
8.5
V
VREG UVLO falling threshold
V
REG_FUVLO
6
6.8
7.6
V
VREG UVLO hysteresis
V
REG_HYS
610
mV
VIN UVLO rising threshold
V
VIN_RUVLO
3.6
4
4.4
V
VIN UVLO falling threshold
V
VIN_FUVLO
3.4
3.8
4.3
V
VIN UVLO hysteresis
V
VIN_HYS
100
mV
VBST UVLO threshold
V
BST_UVLO
Voltage between SHx and BSTx
4
V
OCREF threshold
VOC
VOC = 1V
0.8
1
1.2
V
VOC = 2.4V
2.18
2.4
2.62
V
OCP deglitch time
tOC
2.7
µs
Sleep wake-up time
tSLEEP
2
ms
Thermal shutdown
TTSD
(5)
175
°C
Thermal shutdown hysteresis
TTSD_HYS
(5)
20
°C
Gate Drive
Bootstrap diode forward
voltage
VFBOOT
ID = 10mA
1.2
V
ID = 50mA
2.3
V
Maximum source current
DSO
(5)
0.8
A
Maximum sink current
DSI
(5)
1
A
Gate drive pull-up resistance
RUP
VDS = 1V
7
HS gate drive pull-down
resistance
RHS-DN
VDS = 1V
0.6
4.5
LS gate drive pull-down
resistance
RLS-DN
VDS = 1V
0.6
4.5
LS automatic turn-on time
tLS
4.6
µs
Dead time
tDEAD
RDT = 10kΩ
560
ns
RDT = 100kΩ
4.5
µs
DT tied to GND
77
ns
NOTES:
5) Guaranteed by design.



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