| Electronic Components Datasheet Search |
|
MP6538GV Datasheet(PDF) 13 Page - Monolithic Power Systems |
|
|
|||||||||||||||||||||||||||||
MP6538GV Datasheet(HTML) 13 Page - Monolithic Power Systems |
|
13 / 14 page ![]() MP6538 – 100V, THREE-PHASE, BLDC MOTOR PRE-DRIVER WITH HALL SIGNAL INTERFACE MP6538 Rev. 1.01 www.MonolithicPower.com 13 4/20/2018 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2018 MPS. All Rights Reserved. For low current applications, LDO is connected to VREG directly. For higher current requirements, an NPN transistor is used (see Figure 2). VREG LDO Regulator VIN LDO VIN VIN optional Figure 2: High-Current Configuration of the LDO If desired, an appropriate gate-drive supply voltage can be supplied directly to VREG from an external supply. In this case, connect only the capacitor to LDO. VIN must still be connected to the motor supply voltage. OCP Deglitch Time There is usually a current spike during the switching transition due to the body diode’s reverse-recovery current or the distributed inductance or capacitance. This current spike requires filtering to prevent it from erroneously triggering OCP and shutting down the external MOSFET. An internal fixed deglitch time (tOC) (which is also the minimum on time for the MOSFET) blanks the output of the VDS monitor when the outputs are switched. Charge Pump and Bootstrap Normally, the high-side gate-drive voltage is generated from bootstrap capacitors connected between SHx and BSTx. The bootstrap capacitor is charged whenever the LS-FET is turned on. If the output is held at a high state for a long period of time, the bootstrap capacitor discharges slowly. This eventually results in gate driver loss for the high-side MOSFET (HS- FET). To prevent this, an internal charge pump generates a voltage to maintain the bootstrap capacitor charge. The bootstrap voltage is monitored by an under-voltage detection circuit. If any bootstrap voltage falls below the VBST UVLO voltage, the part initiates a new power-up sequence. Dead-Time Adjustment To prevent shoot-through in any phase of the bridge, it is necessary to insert a dead time (tDEAD) between a high- or low-side turn-off and the next complementary turn-on event. The dead time for all three phases is set by a single dead-time resistor (RDT) between DT and ground using Equation (3): tDEAD(μs) = 0.044*R(kΩ) + 0.1 (3) If DT is tied to GND directly, an internal minimum dead time of 30ns is applied. Leave DT open to generate a 6µs dead time. VREG and VIN UVLO Protection If at any time the voltage on VREG falls below the VREG UVLO threshold voltage, the outputs are disabled, and the nFAULT signal is asserted. Operation resumes with a bootstrap refresh when VREG rises above the UVLO threshold. If the voltage on VIN falls below the VIN UVLO threshold voltage, all circuitry in the device is disabled, and the internal logic is reset. nFAULT is not be asserted. Operation resumes when VREG rises above the UVLO threshold. Thermal Shutdown If the die temperature exceeds safe limits, the MP6538 enters a latched fault state similar to an OCP event, and nFAULT is driven low. Only nSLEEP or UVLO can unlatch the device from an OTP fault lockout. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |