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MP6538GV Datasheet(PDF) 13 Page - Monolithic Power Systems

Part # MP6538GV
Description  100V, Three-Phase, BLDC Motor Pre-Driver with Hall Signal Interface
PDF  14 Pages
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Manufacturer  MPS [Monolithic Power Systems]
Direct Link  http://www.monolithicpower.com
Logo MPS - Monolithic Power Systems

MP6538GV Datasheet(HTML) 13 Page - Monolithic Power Systems

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MP6538 – 100V, THREE-PHASE, BLDC MOTOR PRE-DRIVER WITH HALL SIGNAL INTERFACE
MP6538 Rev. 1.01
www.MonolithicPower.com
13
4/20/2018
MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.
© 2018 MPS. All Rights Reserved.
For low current applications, LDO is connected
to
VREG
directly.
For
higher
current
requirements, an NPN transistor is used (see
Figure 2).
VREG
LDO
Regulator
VIN
LDO
VIN
VIN
optional
Figure 2: High-Current Configuration of the LDO
If desired, an appropriate gate-drive supply
voltage can be supplied directly to VREG from
an external supply. In this case, connect only
the capacitor to LDO. VIN must still be
connected to the motor supply voltage.
OCP Deglitch Time
There is usually a current spike during the
switching transition due to the body diode’s
reverse-recovery
current
or
the
distributed
inductance or capacitance. This current spike
requires filtering to prevent it from erroneously
triggering OCP and shutting down the external
MOSFET. An internal fixed deglitch time (tOC)
(which is also the minimum on time for the
MOSFET) blanks the output of the VDS monitor
when the outputs are switched.
Charge Pump and Bootstrap
Normally, the high-side gate-drive voltage is
generated from bootstrap capacitors connected
between
SHx
and
BSTx.
The
bootstrap
capacitor is charged whenever the LS-FET is
turned on.
If the output is held at a high state for a long
period
of
time,
the
bootstrap
capacitor
discharges slowly. This eventually results in
gate driver loss for the high-side MOSFET (HS-
FET).
To prevent this, an internal charge pump
generates a voltage to maintain the bootstrap
capacitor charge.
The bootstrap voltage is monitored by an
under-voltage detection circuit. If any bootstrap
voltage falls below the VBST UVLO voltage, the
part initiates a new power-up sequence.
Dead-Time Adjustment
To prevent shoot-through in any phase of the
bridge, it is necessary to insert a dead time
(tDEAD) between a high- or low-side turn-off and
the next complementary turn-on event. The
dead time for all three phases is set by a single
dead-time resistor (RDT) between DT and
ground using Equation (3):
tDEAD(μs) = 0.044*R(kΩ) + 0.1
(3)
If DT is tied to GND directly, an internal
minimum dead time of 30ns is applied. Leave
DT open to generate a 6µs dead time.
VREG and VIN UVLO Protection
If at any time the voltage on VREG falls below the
VREG UVLO threshold voltage, the outputs are
disabled, and the nFAULT signal is asserted.
Operation resumes with a bootstrap refresh when
VREG rises above the UVLO threshold.
If the voltage on VIN falls below the VIN UVLO
threshold voltage, all circuitry in the device is
disabled,
and
the
internal
logic
is
reset.
nFAULT is not be asserted. Operation resumes
when VREG rises above the UVLO threshold.
Thermal Shutdown
If the die temperature exceeds safe limits, the
MP6538 enters a latched fault state similar to
an OCP event, and nFAULT is driven low. Only
nSLEEP or UVLO can unlatch the device from
an OTP fault lockout.



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