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TE28F320B3BC90 Datasheet(PDF) 26 Page - Intel Corporation |
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TE28F320B3BC90 Datasheet(HTML) 26 Page - Intel Corporation |
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26 / 58 page ![]() 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 20 3UHOLPLQDU\ 4.4 DC Characteristics Sym Parameter VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V Unit Test Conditions VCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V Note Typ Max Typ Max Typ Max ILI Input Load Current 1,2 ± 1 ± 1 ± 1 µA VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND ILO Output Leakage Current 1,2 ± 10 ± 10 ± 10 µA VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND ICCS VCC Standby Current for 0.18 Micron Product 1,2 7 15 20 50 150 250 µA VCC = VCCMax CE# = RP# = VCCQ or during Program/ Erase Suspend WP# = VCCQ or GND VCC Standby Current for 0.25 Micron and 0.4 Micron Product 1,2 18 35 20 50 150 250 µA ICCD VCC Power-Down Current for 0.18 Micron Product 1,2 7 15 7 20 7 20 µA VCC = VCCMax VCCQ = VCCQMax VIN = VCCQ or GND RP# = GND ± 0.2 V VCC Power-Down Current for 0.25 Micron and 0.4 Micron Product 1,2 7 25 7 25 7 25 µA ICCR VCC Read Current for 0.18 Micron Product 1,2,3 9 18 8 15 9 15 mA VCC = VCCMax VCCQ = VCCQMax OE# = VIH , CE# =VIL f = 5 MHz, IOUT=0 mA Inputs = VIL or VIH VCC Read Current for 0.25 and 0.4 Micron Product 1,2,3 10 18 8 15 9 15 mA IPPD VPP Deep Power-Down Current 0.2 5 0.2 5 0.2 5 µA RP# = GND ± 0.2 V VPP ≤ VCC IPPR VPP Read Current 1,4 2 ±15 2 ±15 2 ±15 µA VPP ≤ VCC 50 200 50 200 50 200 µA VPP > VCC ICCW+ IPPW VCC + VPP Program Current for 0.18 Micron Product 1,2,4 18 55 18 55 18 55 mA VPP =VPP1, 2, 3 Program in Progress 8 1510301030 mA VPP = VPP4 Program in Progress VCC + VPP Program Current for 0.25 Micron and 0.4 Micron Product 1,2,4 18 55 18 55 18 55 mA VPP =VPP1, 2, 3 Program in Progress 10 30 10 30 10 30 mA VPP = VPP4 Program in Progress |
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