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TE28F320B3BC90 Datasheet(PDF) 32 Page - Intel Corporation

Part # TE28F320B3BC90
Description  3 Volt Advanced Boot Block Flash Memory
PDF  58 Pages
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

TE28F320B3BC90 Datasheet(HTML) 32 Page - Intel Corporation

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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
26
3UHOLPLQDU\
AC Characteristics, Continued
NOTES:
1. OE# may be delayed up to tELQV–tGLQV after the falling edge of CE# without impact on tELQV.
2. Sampled, but not 100% tested.
See Figure 7 for the AC waveform for read operations.
See Figure 5, “Input/Output Reference Waveform” on page 22 for timing measurements and maximum
allowable input slew rate.
#
Sym
Parameter
Density
64 Mbit
Unit
Product
90 ns
100 ns
VCC
2.7 V–3.6 V
2.7 V–3.6 V
Note
Min
Max
Min
Max
R1
tAVAV
Read Cycle Time
90
100
ns
R2
tAVQV
Address to Output Delay
90
100
ns
R3
tELQV
CE# to Output Delay
1
90
100
ns
R4
tGLQV
OE# to Output Delay
1
20
20
ns
R5
tPHQV
RP# to Output Delay
150
150
ns
R6
tELQX
CE# to Output in Low Z
2
0
0
ns
R7
tGLQX
OE# to Output in Low Z
2
0
0
ns
R8
tEHQZ
CE# to Output in High Z
2
20
20
ns
R9
tGHQZ
OE# to Output in High Z
2
20
20
ns
R10
tOH
Output Hold from Address, CE#, or
OE# Change, Whichever Occurs First
20
0
ns
Figure 7. AC Waveform: Read Operations
High Z
Valid Output
Address Stable
Data Valid
Device
Address Selection
Standby
ADDRESSES (A)
V
IH
V
IL
V
IH
V
IL
CE# (E)
V
IH
V
IL
V
OH
V
OL
V
IH
V
IL
OE# (G)
WE# (W)
DATA (D/Q)
RP# (P)
High Z
V
IH
V
IL
R1
R2
R4
R3
R5
R6
R7
R8
R9
R10



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