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74LVC1G125 Datasheet(PDF) 1 Page - Silicon Supplies |
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74LVC1G125 Datasheet(HTML) 1 Page - Silicon Supplies |
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1 / 8 page ![]() Low Voltage CMOS Logic – 74LVC1G125 Single Non-Inverting Buffer/Line Driver with 3-State Output in bare die form Rev 1.0 29/06/19 Features: Inputs directly interface TTL The 74LVC1G125 is a single non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input (OE). A HIGH-level at pin OE sets the output to a high-impedance OFF- state. The device is driven by 3.3V or 5V inputs enabling use of this device in a mixed voltage environment. The part operates over a 1.65V to 5.5V supply range and is fully specified for partial power-down applications using IOFF. IOFF circuitry disables the output and prevents damaging backflow current through the device at power down. The device suits level translation and interfacing TTL to CMOS logic. Inputs accept up to 5.5V enabling level translation down to VCC Wide Supply Voltage: VCC 1.65V - 5.5V Output Drive capability: ±24mA, VCC = 3V Low Quiescent Current: 4µA max High speed: tpd 4.5ns max, VCC = 3V Tiny die size. Ordering Information Description Die Dimensions in µm (mils) The following part suffixes apply: No suffix - MIL-STD-883 /2010B Visual Inspection 590 (23) For High Reliability versions of this product please see 54LVC1G125 Supply Formats: Mechanical Specification Default – Die in Waffle Pack (400 per tray capacity) Sawn Wafer on Tape – On request Unsawn Wafer – On request Die Thickness <> 280µm(11 Mils) – On request 590 x 480 µm Die Size (Unsawn) 23 x 19 mils Minimum Bond Pad Size 70 x 70 2.76 x 2.76 µm mils Die Thickness 280 (±20) µm 11.02 (±0.79) mils Top Metal Composition Al-Si-Cu 3 µm Back Metal Composition N/A – Bare Si Assembled into Ceramic Package – On request Page 1 of 8 www.siliconsupplies.com |
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