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RT8207LZQW Datasheet(PDF) 22 Page - Richtek Technology Corporation

Part # RT8207LZQW
Description  Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller
PDF  27 Pages
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Manufacturer  RICHTEK [Richtek Technology Corporation]
Direct Link  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8207LZQW Datasheet(HTML) 22 Page - Richtek Technology Corporation

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DS8207L/M-08 September 2016
www.richtek.com
RT8207L/M
©
Copyright 2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
Table 2. S3 and S5 truth table
STATE S3
S5
VDDQ
VTTREF
VTT
S0
Hi
Hi
On
On
On
S3
Lo
Hi
On
On
Off (Hi-Z)
S4/S5 Lo
Lo
Off
(Discharge)
Off
(Discharge)
Off
(Discharge)
VDDQ and VTT Discharge Control
The RT8207L/M discharges VDDQ, VTTREF and VTT
outputs when S5 is low or in the S4/S5 state. There are
two different discharge modes. For the RT8207L, the
discharge mode is set by connecting the MODE pin
according to Table 3. For the RT8207M, the discharge
mode is set by placing a resistor (RTON) between the TON
pin and VIN, as shown in Table 4.
MODE
Discharge Mode
VDD
No discharge
VDDQ
Tracking discharge
GND
Non-tracking discharge
Table 3. Discharge selection for the RT8207L
TON pin connect RTON to
Discharge Mode
VIN
Non-tracking discharge
Table 4. Discharge selection for the RT8207M
When in tracking discharge mode, the RT8207L
discharges outputs through the internal VTT regulator
transistors and VTT output tracks half of the VDDQ voltage
during this discharge. Note that the VDDQ discharge
current flows via VLDOIN to VTTGND; thus VLDOIN must
be connected to VDDQ in this mode. The internal LDO
can handle up to 1.5A and discharge quickly. After VDDQ
is discharged down to 0.15V, the terminal LDO will be
turned off and the operation mode is changed to the non-
tracking discharge mode.
When in non-tracking discharge mode, the RT8207L/M
discharges outputs using internal MOSFETs which are
connected to VDDQ and VTT. The current capability of
these MOSFETs is limited to discharge slowly. Note that
the VDDQ discharge current flows from VDDQ to GND in
this mode.
When in no discharge mode, the RT8207L does not
discharge output charge at all.
Output Inductor Selection
The switching frequency (on-time) and operating point (%
ripple or LIR) determine the inductor value as follows :
ON
IN
VDDQ
IR
LOAD(MAX)
t
x (V
V
)
L
L
x I
where LIR is the ratio of the peak-to-peak ripple current to
the maximum average inductor current.
Find a low loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite cores
are often the best choice, although powdered iron is
inexpensive and can work well at 200kHz. The core must
be large enough not to saturate at the peak inductor current
(IPEAK) :

 
PEAK
LOAD(MAX)
IR
LOAD(MAX)
I
I
(L /2) x I
Output Management by S3, S5 Control
In DDR2/DDR3 memory applications, it is important to
always keep VDDQ higher than VTT/VTTREF, even during
start up and shutdown. The RT8207L/M provides this
management by simply connecting both S3 and S5
terminals to the sleep-mode signals such as SLP_S3 and
SLP_S5 in notebook PC system. All VDDQ, VTTREF and
VTT are turned on at S0 state (S3 = S5 = high). In S3
state (S3 = low, S5 = high), VDDQ and VTTREF voltages
are kept on while VTT is turned off and left at high
impedance (high-Z) state. The VTT output is floated and
does not sink or source current in this state. In S4/S5
states (S3 = S5 = low), all of the three outputs are
disabled. Outputs are discharged to ground according to
the discharge mode selected by the MODE pin (see VDDQ
and VTT Discharge Control section). The code of each
state represents the following: S0 = full ON, S3 = suspend
to RAM (STR), S4 = suspend to disk (STD), S5 = soft
OFF. (See Table 2)



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