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RT8207LZQW Datasheet(PDF) 24 Page - Richtek Technology Corporation |
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RT8207LZQW Datasheet(HTML) 24 Page - Richtek Technology Corporation |
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24 / 27 page ![]() 24 DS8207L/M-08 September 2016 www.richtek.com RT8207L/M © Copyright 2016 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Figure 9. Derating Curve of Maximum Power Dissipation Layout Considerations Layout is very important in high frequency switching converter design. If designed improperly, the PCB could radiate excessive noise and contribute to the converter instability. Certain points must be considered before starting a layout for the RT8207L/M. Connect an RC low pass filter from VDDP to VDD; 1 μF and 5.1 Ω are recommended. Place the filter capacitor close to the IC. Keep current limit setting network as close as possible to the IC. Routing of the network should avoid coupling to high voltage switching node. Connections from the drivers to the respective gate of the high side or the low side MOSFET should be as short as possible to reduce stray inductance. All sensitive analog traces and components such as VDDQ, FB, PGND, PGOOD, CS, VDD, and TON should be placed away from high voltage switching nodes such as PHASE, LGATE, UGATE, and BOOT to avoid coupling. Use internal layer(s) as ground plane(s) and shield the feedback trace from power traces and components. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 Ambient Temperature (°C) Four-Layer PCB WQFN-24L 4x4 WQFN-20L 3x3 Thermal Considerations The junction temperature should never exceed the absolute maximum junction temperature TJ(MAX), listed under Absolute Maximum Ratings, to avoid permanent damage to the device. The maximum allowable power dissipation depends on the thermal resistance of the IC package, the PCB layout, the rate of surrounding airflow, and the difference between the junction and ambient temperatures. The maximum power dissipation can be calculated using the following formula : PD(MAX) = (TJ(MAX) − TA) / θJA where TJ(MAX) is the maximum junction temperature, TAis the ambient temperature, and θJA is the junction-to-ambient thermal resistance. For continuous operation, the maximum operating junction temperature indicated under Recommended Operating Conditions is 125 °C. The junction-to-ambient thermal resistance, θJA, is highly package dependent. For a WQFN-24L 4x4 package, the thermal resistance, θJA, is 52 °C/W on a standard JEDEC 51-7 high effective-thermal- conductivity four-layer test board. For a WQFN-20L 3x3 package, the thermal resistance, θJA, is 68°C/W on a standard JEDEC 51-7 high effective-thermal-conductivity four-layer test board. The maximum power dissipation at TA = 25 °C can be calculated as below : PD(MAX) = (125 °C − 25°C) / (52°C/W) = 1.923W for a WQFN-24L 4x4 package. PD(MAX) = (125 °C − 25°C) / (68°C/W) = 1.471W for a WQFN-20L 3x3 package. The maximum power dissipation depends on the operating ambient temperature for the fixed TJ(MAX) and the thermal resistance, θJA. The derating curves in Figure 9 allows the designer to see the effect of rising ambient temperature on the maximum power dissipation. |
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