TLP291

2012-04-26

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TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TLP291

Power Supplies

Programmable Controllers

Hybrid ICs

TLP291 consists of photo transistor, optically coupled to a gallium arsenide

infrared emitting diode. TLP291 is housed in the SO4 package, very small

and thin coupler.

Since TLP291 is guaranteed wide operating temperature (Ta=-55 to 110 ˚C)

and high isolation voltage (3750Vrms), it’s suitable for high-density surface

mounting applications such as small switching power supplies and

programmable controllers.

Collector-Emitter Voltage

: 80 V (min)

Current Transfer Ratio

: 50% (min)

Rank GB

: 100% (min)

Isolation Voltage

: 3750 Vrms (min)

Operation temperature: -55 to 110 ˚C

UL recognized

: UL1577, File No. E67349

cUL approved

: CSA Component Acceptance Service No.5A,

File No. 67349

SEMKO aprroved:

EN 60065: 2002, Approved no. 1200315

EN 60950-1: 2001, EN 60335-1: 2002,

Approved no. 1200315

BSI approved

: BS EN 60065: 2002, Approved no. 9036

: BS EN 60950-1: 2006, Approved no. 9037

Option (V4)

VDE approved: EN 60747-5-5 Certificate, No. 40009347

Maximum operating insulation voltage: 707 Vpk

Highest permissible over-voltage: 6000 Vpk

(Note) When a EN 60747-5-5 approved type is needed,

please designate the “Option(V4)”

Construction Mechanical Rating

Creepage distance:5.0mm(min)

Clearance:5.0mm(min)

Insultion thickness:0.4mm(min)

TOSHIBA

11-3C1

Weight: 0.05 g (typ.)

1:ANODE

2:CATHODE

3:EMITTER

4:COLLECTOR

1

2

4

3

TLP291

Pin Configuration

Unit: mm

Free Datasheet http://www.datasheet4u.net/