PMV42ENE datasheet(7/17 Pages) NEXPERIA

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Nexperia

PMV42ENE

30 V, N-channel Trench MOSFET

PMV42ENE

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Product data sheet

16 March 2016

7 / 17

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = 250 µA; VGS = 0 V; Tj = 25 °C

VGSth

gate-source threshold

voltage

ID = 250 µA; VDS=VGS; Tj = 25 °C

1.4

IDSS

drain leakage current

VDS = 30 V; VGS = 0 V; Tj = 25 °C

µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C

µA

VGS = -16 V; VDS = 0 V; Tj = 25 °C

-10

µA

VGS = 4.5 V; VDS = 0 V; Tj = 25 °C

100

IGSS

gate leakage current

VGS = -4.5 V; VDS = 0 V; Tj = 25 °C

-100

VGS = 10 V; ID = 4.4 A; Tj = 25 °C

mΩ

VGS = 10 V; ID = 4.4 A; Tj = 150 °C

mΩ

RDSon

drain-source on-state

resistance

VGS = 4.5 V; ID = 3.5 A; Tj = 25 °C

mΩ

gfs

forward

transconductance

VDS = 10 V; ID = 4.4 A; Tj = 25 °C

gate resistance

f = 1 MHz; Tj = 25 °C

1.5

Dynamic characteristics

QG(tot)

total gate charge

5.5

QGS

gate-source charge

0.8

QGD

gate-drain charge

VDS = 15 V; ID = 4.4 A; VGS = 10 V;

Tj = 25 °C

1.1

Ciss

input capacitance

281

Coss

output capacitance

Crss

reverse transfer

capacitance

VDS = 15 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

td(on)

turn-on delay time

rise time

td(off)

turn-off delay time

fall time

VDS = 15 V; ID = 4.4 A; VGS = 10 V;

RG(ext) = 6 Ω; Tj = 25 °C

Source-drain diode

VSD

source-drain voltage

IS = 1 A; VGS = 0 V; Tj = 25 °C

0.8

1.2

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