AFSC5G35D35 datasheet(5/12 Pages) NXP

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AFSC5G35D35

RF Device Data

NXP Semiconductors

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1) (In NXP Doherty Production ATE (2) Test Fixture, 50 ohm system) VDD =24 Vdc, IDQ1A =19 mA, IDQ2A =28 mA,

VGS1B =(Vt – 0.01) (3) Vdc, VGS2B =(Vt – 0.22) (3) Vdc, Pout = 3 W Avg., Two--tone CW, f1 = 3470 MHz, f2 = 3530 MHz, 60 MHz Tone Spacing.

Gain

22.7

23.7

26.1

Drain Efficiency

D

29.5

35.1

—

Intermodulation Distortion

IM3

—

–26.1

–20.0

dBc

Pout @ 3 dB Compression Point

f1 = 3402.5 MHz

f2 = 3597.5 MHz

P3dB

40.0

41.2

42.0

42.2

—

dBm

Wideband Ruggedness (4) (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) IDQ1A =19 mA, IDQ2A =28 mA,

VGSP1 =5.8 Vdc, VGSP2 = 2.6 Vdc, f = 3500 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR

ISBW of 400 MHz at 24 Vdc, 9 W Avg. Modulated Output Power

(6 dB Input Overdrive from 3 W Avg. Modulated Output Power)

No Device Degradation

Typical Performance (4) (In NXP Doherty Power Amplifier Module Reference Circuit, 50 ohm system) VDD =24 Vdc, IDQ1A =19 mA,

IDQ2A =28 mA, VGSP1 =1.55 Vdc, VGSP2 =1.14 Vdc, Pout = 3 W Avg., 3500 MHz

VBW Resonance Point, 2--tone, 1 MHz Tone Spacing

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

300

—

MHz

Quiescent Current Accuracy over Temperature (5)

with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 1

with 2.2 k Gate Feed Resistors (–40 to 85C) Stage 2

IQT

—

1.0

2.0

—

1--carrier 20 MHz LTE, 8 dB Input Signal PAR

Gain

—

24.9

—

Power Added Efficiency

PAE

—

36.7

—

Adjacent Channel Power Ratio

ACPR

—

–30.8

—

dBc

Adjacent Channel Power Ratio

ALT1

—

–40.0

—

dBc

Adjacent Channel Power Ratio

ALT2

—

–49.0

—

dBc

Output Peak--to--Average Ratio @ 0.01% Probability

PAR

—

8.1

—

Gain Flatness (6)

—

0.5

—

Fast CW, 27 ms Sweep

Pout @ 3 dB Compression Point

P3dB

—

43.2

—

dBm

AM/PM @ P3dB



—

–25

—



Pulsed CW, 10 sec(on), 10% Duty Cycle @ P1dB

Gain Variation over Temperature

(–40C to +105C)

G

—

0.029

—

dB/C

Output Power Variation over Temperature

(–40C to +105C)

P1dB

—

0.016

—

dB/C

Table 6. Ordering Information

Device

Tape and Reel Information

Package

AFSC5G35D35T2

T2 Suffix = 2,000 Units, 24 mm Tape Width, 13--inch Reel

10 mm  6 mm Module

1. Part input and output matched to 50 ohms.

2. ATE is a socketed test environment.

3. Refer to AN12071, Doherty Biasing Methodology for Volume Production.Goto http://www.nxp.com/RF and search for AN12071.

4. All data measured in fixture with device soldered in NXP reference circuit.

5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current

Control for the RF Integrated Circuit Device Family.Goto http://www.nxp.com/RF and search for AN1977 or AN1987.

6. Gain flatness = Max(G(fLow to fHigh)) – Min(G(fLow to fHigh))

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