AFSC5G35D35

11

RF Device Data

NXP Semiconductors

PRODUCT DOCUMENTATION AND TOOLS

Refer to the following resources to aid your design process.

Application Notes

 AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

 AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family

 AN12071: Doherty Biasing Methodology for Volume Production

Development Tools

 Printed Circuit Boards

FAILURE ANALYSIS

At this time, because of the physical characteristics of the part, failure analysis is limited to electrical signature analysis.

In cases where NXP is contractually obligated to perform failure analysis (FA) services, full FA may be performed by third

party vendors with moderate success. For updates contact your local NXP Sales Office.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

May 2018

 Initial release of data sheet

1

July 2018

 Table 3, ESD Protection Characteristics: changed ESD human body model (HBM) from Class 1B to 1C to

reflect recent ESD test results of the device, p. 2

2

May 2019

 Typical LTE Performance table: table values and condition updated to reflect 1

measurement, pp. 1, 5

 Table 1, Maximum Ratings: add drain--source voltage to table, p. 3

 Added Wideband Ruggedness table, p. 5

 General updates made to align data sheet to current standard