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M58LT128GS Datasheet(PDF) 14 Page - STMicroelectronics

Part # M58LT128GS
Description  128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories
PDF  98 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT128GS Datasheet(HTML) 14 Page - STMicroelectronics

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2 Signal descriptions
M58LT128GST, M58LT128GSB
14/98
2.7
Latch Enable (L)
Latch Enable latches the A0-A22 address bits on its rising edge. The address latch is
transparent when Latch Enable is at VIL and it is inhibited when Latch Enable is at VIH.
2.8
Clock (K)
The clock input synchronizes the memory to the microcontroller during synchronous read
operations; the address is latched on a Clock edge (rising or falling, according to the
configuration settings) when Latch Enable is at VIL. Clock is ignored during asynchronous read
and in write operations.
2.9
Wait (WAIT)
Wait is an output signal used during synchronous read to indicate whether the data on the
output bus are valid. This output is high impedance when Chip Enable is at VIH or Reset is at
VIL. It can be configured to be active during the wait cycle or one clock cycle in advance. The
WAIT signal is forced deasserted when Output Enable is at VIH.
2.10
VDD Supply Voltage
VDD provides the power supply to the internal core of the memory device. It is the main power
supply for all operations (Read, Program and Erase).
2.10.1 VDDQ Supply Voltage
VDDQ provides the power supply to the I/O pins and enables all Outputs to be powered
independently from VDD. VDDQ can be tied to VDD or can use a separate supply.
2.11
VPP Program Supply Voltage
The VPP pin is both a power supply and a write protect pin. The functions are selected by the
voltage range applied to the pin.
When VPP is lower than VPPLK, it is seen as a write protect pin protecting the whole memory
array. Program and erase operations on all blocks are ignored while VPP is Low.
When VPP is Higher than VPP1, the memory reverts to the previous protection state of the
memory array. Program and erase operations can now modify the data in any block (refer to
Table 21: DC Characteristics - Voltages for VPPLK and VPP1 values). VPP is only sampled at the
beginning of a program or erase; a change in its value after the operation has started does not
have any effect and program or erase operations continue.
If VPP is in the range of VPPH it acts as a power supply pin. In this condition VPP must be stable
until the Program/Erase algorithm is completed.
The VPP pin must not be left floating or unconnected or the device may become unreliable. A
0.1µF capacitor should be connected between the VPP pin and the VSS Ground pin to decouple
the current surges from the power supply. The PCB track widths must be sufficient to carry the
currents required during Unlock Bypass Program, IPP.



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