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PIC16F916E/P301 Datasheet(PDF) 229 Page - Microchip Technology |
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PIC16F916E/P301 Datasheet(HTML) 229 Page - Microchip Technology |
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229 / 272 page ![]() © 2005 Microchip Technology Inc. Preliminary DS41250E-page 227 PIC16F917/916/914/913 Capacitive Loading Specs on Output Pins D100 COS C2 OSC2 pin — — 15* pF In XT, HS and LP modes when external clock is used to drive OSC1 D101 CIO All I/O pins — — 50* pF Data EEPROM Memory D120 ED Byte Endurance 100K 1M — E/W -40 °C ≤ TA ≤ +85°C D120A ED Byte Endurance 10K 100K — E/W +85°C ≤ TA ≤ +125°C D121 VDRW VDD for Read/Write VMIN — 5.5 V Using EECON1 to read/write VMIN = Minimum operating voltage D122 TDEW Erase/Write Cycle Time — 5 6 ms D123 TRETD Characteristic Retention 40 — — Year Provided no other specifica- tions are violated D124 TREF Number of Total Erase/Write Cycles before Refresh(2) 1M 10M — E/W -40 °C ≤ TA ≤ +85°C Program Flash Memory D130 EP Cell Endurance 10K 100K — E/W -40 °C ≤ TA ≤ +85°C D130A ED Cell Endurance 1K 10K — E/W +85°C ≤ TA ≤ +125°C D131 VPR VDD for Read VMIN —5.5 V VMIN = Minimum operating voltage D132 VPEW VDD for Erase/Write 4.5 — 5.5 V D133 TPEW Erase/Write cycle time — 2 2.5 ms D134 TRETD Characteristic Retention 40 — — Year Provided no other specifica- tions are violated 19.4 DC Characteristics: PIC16F917/916/914/913-I (Industrial) PIC16F917/916/914/913-E (Extended) (Continued) DC CHARACTERISTICS Standard Operating Conditions (unless otherwise stated) Operating temperature -40°C ≤ TA ≤ +85°C for industrial -40°C ≤ TA ≤ +125°C for extended Param No. Sym. Characteristic Min. Typ† Max. Units Conditions * These parameters are characterized but not tested. † Data in ‘Typ’ column is at 5.0V, 25 °C unless otherwise stated. These parameters are for design guidance only and are not tested. Note 1: In RC oscillator configuration, the OSC1/CLKI pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC mode. 2: Negative current is defined as current sourced by the pin. 3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating conditions. Higher leakage current may be measured at different input voltages. |
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