ESDX051-2BU3 datasheet(3/11 Pages) STMICROELECTRONICS

3 / 11 page

1.1

Characteristics (curves)

Figure 2. Leakage current versus junction temperature

(typical values)

100

150

Ir(nA)

j(°C)

Ir at V

RM = 5 V

Figure 3. Junction capacitance versus applied voltage

(typical values)

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.400

0.450

0.500

-5

-4

-3

-2

-1

C(pF)

r (V)

F = 1MHz

osc = 30mVRMS

j = 25°C

Figure 4. S21 attenuation measurement result

-2

-1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

1.0E+07

1.0E+08

1.0E+09

1.0E+10

1.0E+11

S21(dB)

F(Hz)

Figure 5. Junction capacitance versus applied frequency

(typical values)

C(pF)

F(Hz)

Figure 6. ESD response to IEC 61000-4-2 (+8 kV contact

discharge)

50 V/Div

20 ns/Div

V : Peak clamping voltage

V : Clamping voltage at 30 ns

V : Clamping voltage at 60 ns

V : Clamping voltage at 100 ns

20V

32 V

34 V

225 V

Figure 7. ESD response to IEC 61000-4-2 (-8 kV contact

discharge)

50 V/Div

20 ns/Div

V : Peak clamping voltage

V : Clamping voltage at 30 ns

V : Clamping voltage at 60 ns

V : Clamping voltage at 100 ns

-12V

-22V

-29 V

-218 V

ESDX051-2BU3

Characteristics (curves)

DS13592 - Rev 1

page 3/11

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