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TPS2399DMT7G Datasheet(PDF) 4 Page - ON Semiconductor |
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TPS2399DMT7G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 15 page ![]() TPS2398, TPS2399 www.onsemi.com 4 Table 5. ELECTRICAL CHARACTERISTICS VI(−VIN) = −48 V with respect to RTN, VI(EN) = 2.8 V, VI(ISENS) = 0 V, all outputs unloaded, device not in fault mode, TJ = 25°C; unless otherwise noted. The Min and Max specifications are guaranteed at −40 °C ≤ TJ ≤ 85°C. (Notes 5, 6) Parameter Unit Max Typ Min Symbol Test Conditions LINEAR CURRENT AMPLIFIER (LCA) Reference clamp voltage VO(IRAMP) = open VREF_K 33 40 46 mV Input offset voltage VO(IRAMP) = 2 V VIO −7 6 mV RAMP GENERATOR IRAMP source current, slow turn−on rate VO(IRAMP) = 0.25 V ISRC1 −850 −600 −400 nA IRAMP source current, normal rate VO(IRAMP) = 1 V, 3 V ISRC2 −11 −10 −9 mA Low−level output voltage VI(EN) = 0 V VOL 5 mV Voltage gain, relative to ISENS VO(IRAMP) = 1 V, 3 V AV 9.5 10 10.5 mV/V OVERLOAD COMPARATOR Current overload threshold, ISENS VTH_OL 80 100 120 mV Glitch filter delay time VI(ISENS) = 200 mV tDLY 2 4 7 ms FAULT TIMER Low−level output voltage VI(EN) = 0 V VOL 5 mV Charging current, current limit mode VI(ISENS) = 80 mV, VO(FLTTIME) = 2 V ICHG −55 −50 −45 mA Fault threshold voltage VFLT 3.75 4.0 4.25 V Discharge current, retry mode (TPS2399) VI(ISENS) = 80 mV, VO(FLTTIME) = 2 V, Fault Mode IDSG 0.38 0.75 mA Output duty cycle (TPS2399) D 0.8 1.5 % Discharge current, timer reset mode VO(FLTTIME) = 2 V IRST 1 mA PG OUTPUT High−level output (leakage) current VI(EN) = 0 V, VO(PG) = 65 V IOH 10 mA Driver ON resistance IO(PG) = 1 mA RDS(ON) 35 80 W 5. All voltages are with respect to the −VIN terminal unless otherwise stated. 6. Currents are positive into and negative out of the specified terminal. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. |
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