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TPS2399DMT7G Datasheet(PDF) 3 Page - ON Semiconductor |
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TPS2399DMT7G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 15 page ![]() TPS2398, TPS2399 www.onsemi.com 3 Table 2. ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Input voltage range, all pins except RTN, EN, PG (Note 1) −0.3 to 15 V Input voltage range, RTN (Note 1) RTN −0.3 to 100 V Input voltage range, EN (Notes 1, 2) EN −0.3 to 100 V Output voltage range, PG (Notes 1, 3) PG −0.3 to 100 V Continuous output current, PG IPG 10 mA Continuous total power dissipation, TA < 25 PD(MAX) 420 mW Operating junction temperature range TJ(MAX) −40 to 125 °C Storage temperature range TSTG −55 to 150 °C Lead temperature soldering 1.6 mm (1/16 inch) from case for 10 seconds TSOL 260 °C Human Body Model (HBM) (Note 4) ESDHBM 2.0 kV Charged Device Model (CDM) (Note 4) ESDCDM 1.5 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. With 100−k W minimum input series resistance, −0.3 V to 15 V with low impedance. 3. With 10−k W minimum input series resistance, −0.3 V to 80 V with low impedance. 4. All pins except RTN pin which is specified up to 1.0 kV. Table 3. RECOMMENDED OPERATING CONDITIONS Rating Min Nom Max Unit Nominal input supply, −VIN to RTN −80 −36 V Operating ambient temperature −40 85 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 4. DISSIPATION RATING TABLE Package TA < 255C Derating Factor TA < 855C MSOP−8 420 mW 4.3 mW/ °C 160 mW Table 5. ELECTRICAL CHARACTERISTICS VI(−VIN) = −48 V with respect to RTN, VI(EN) = 2.8 V, VI(ISENS) = 0 V, all outputs unloaded, device not in fault mode, TJ = 25°C; unless otherwise noted. The Min and Max specifications are guaranteed at −40 °C ≤ TJ ≤ 85°C. (Notes 5, 6) Parameter Test Conditions Symbol Min Typ Max Unit INPUT SUPPLY Supply current, RTN VI(RTN) = 48 V ICC 310 450 mA VI(RTN) = 80 V 310 450 mA UVLO threshold, input voltage rising To GATE pull−up, referenced to RTN VUVLO_L −36 −30 −25 V UVLO hysteresis VHYS 1.8 2.3 3.0 V ENABLE INPUT (EN) Threshold voltage, input voltage rising To GATE pull−up VTH 1.25 1.35 1.5 V EN hysteresis VHYS_EN 20 40 90 mV High−level input current VI(EN) = 5 V IIH −2 1 2 mA LINEAR CURRENT AMPLIFIER (LCA) High−level output, GATE VI(ISENS) = 0 V VOH 11 14 17 V Output sink current VI(ISENS) = 80 mV, VO(GATE) = 5 V, Fault mode ISINK 50 100 mA Input current, ISENS 0 V < VI(ISENS) < 0.2 V II −1 1 mA 5. All voltages are with respect to the −VIN terminal unless otherwise stated. 6. Currents are positive into and negative out of the specified terminal. |
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