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TPS2399DMT7G Datasheet(PDF) 7 Page - ON Semiconductor |
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TPS2399DMT7G Datasheet(HTML) 7 Page - ON Semiconductor |
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7 / 15 page ![]() TPS2398, TPS2399 www.onsemi.com 7 TYPICAL CHARACTERISTICS VI(−VIN) = −48 V with respect to RTN, VI(EN) = 2.8 V, VI(ISENS) = 0 V, all outputs unloaded, device not in fault mode, TJ = 25°C Figure 15. GATE High Output Voltage Figure 16. Reference Clamp Voltage TEMPERATURE ( °C) TEMPERATURE ( °C) 100 80 60 40 20 0 −20 −40 13.0 13.2 13.6 13.8 14.0 14.4 14.8 15.0 100 80 60 40 20 0 −20 −40 33 35 37 39 41 43 45 Figure 17. IRAMP Output Current − Slow Rate Figure 18. IRAMP Output Current − Fast Rate TEMPERATURE ( °C) TEMPERATURE ( °C) 100 80 60 40 20 0 −20 −40 −0.75 −0.70 −0.65 −0.60 −0.55 100 80 60 40 20 0 −20 −40 −10.5 −10.3 −10.2 −10.0 −9.9 −9.8 −9.6 −9.5 Figure 19. Voltage Gain, relative to ISNS Figure 20. Current Overload Threshold, ISNS TEMPERATURE ( °C) TEMPERATURE ( °C) 80 60 40 20 0 −20 −40 9.5 9.6 9.8 9.9 10.0 10.2 10.4 10.5 80 60 40 20 0 −20 −40 80 85 90 95 100 110 115 120 9.7 10.1 10.3 105 Average for VI(IRAMP) = 1 V, 3 V 120 13.4 14.2 14.6 120 120 120 −9.7 −10.1 −10.4 |
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