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ADGS1408 Datasheet(PDF) 8 Page - Analog Devices |
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ADGS1408 Datasheet(HTML) 8 Page - Analog Devices |
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8 / 34 page ![]() ADGS1408/ADGS1409 Data Sheet Rev. 0 | Page 8 of 34 Parameter +25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments DIGITAL OUTPUTS SDO Output Voltage Low, VOL 0.4 V max ISINK = 5 mA 0.2 V max ISINK = 1 mA High Impedance Leakage Current 0.001 μA typ VOUT = VGND or VL ±0.1 μA max High Impedance Output Capacitance 4 pF typ GPOx Output Voltage High, VOH VL − 0.2 V V min ISOURCE = 100 μA Low, VOL 0.2 V max ISINK = 100 μA Timing tON (GPO) 95 ns typ CL = 15 pF, see Figure 43 115 115 115 ns max tOFF (GPO) 15 ns typ CL = 15 pF, see Figure 43 20 25 25 ns max Break-Before-Make Time Delay, tD 50 ns typ CL = 15 pF, see Figure 44 35 ns min DIGITAL INPUTS Input Voltage High, VINH 2 V min 3.3 V < VL ≤ 5.5 V 1.35 V min 2.7 V ≤ VL ≤ 3.3 V Low, VINL 0.8 V max 3.3 V < VL ≤ 5.5 V 0.8 V max 2.7 V ≤ VL ≤ 3.3 V Input Current, IINL or IINH 0.001 μA typ VIN = VGND or VL ±0.1 μA max Digital Input Capacitance, CIN 4 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 210 ns typ RL = 100 Ω, CL = 35 pF 280 340 385 ns max VS = 8 V, see Figure 40 tON (EN) 195 ns typ RL = 100 Ω, CL = 35 pF 250 295 325 ns max VS = 8 V, see Figure 41 tOFF (EN) 145 ns typ RL = 100 Ω, CL = 35 pF 185 215 240 ns max VS = 8 V, see Figure 41 Break-Before-Make Time Delay, tD 90 ns typ RL = 100 Ω, CL = 35 pF 50 ns min VS1 = VS2 = 8 V, see Figure 39 Charge Injection, QINJ −12 pC typ VS = 6 V, RS = 0 Ω, CL = 1 nF, see Figure 42 Off Isolation −64 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 34 Channel to Channel Crosstalk −70 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 33 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF, see Figure 37 ADGS1408 36 MHz typ ADGS1409 72 MHz typ Insertion Loss 0.5 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 26 and Figure 27 CS (Off ) 20 pF typ VS = 6 V, f = 1 MHz CD (Off ) VS = 6 V, f = 1 MHz ADGS1408 120 pF typ ADGS1409 60 pF typ |
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