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STM32H723VG Datasheet(PDF) 109 Page - STMicroelectronics |
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STM32H723VG Datasheet(HTML) 109 Page - STMicroelectronics |
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109 / 227 page ![]() DS13313 Rev 2 109/227 STM32H723xE/G Electrical characteristics 208 Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator design guide for ST microcontrollers” available from the ST website www.st.com. Figure 16. Typical application with a 32.768 kHz crystal 1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one. 6.3.10 Internal clock source characteristics The parameters given in Table 34 to Table 36 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 12: General operating conditions. 48 MHz high-speed internal RC oscillator (HSI48) ai17531c STM32 OSC32_OUT fHSE CL1 RF 32.768 kHz resonator Bias controlled gain OSC32_IN CL2 Resonator with integrated capacitors Table 34. HSI48 oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI48 HSI48 frequency VDD=3.3 V, TJ=30 °C 47.5(1) 48 48.5(1) MHz TRIM(2) USER trimming step - - 0.175 0.250 % USER TRIM COVERAGE(3) USER TRIMMING coverage ± 32 steps ±4.70 ±5.6 - % DuCy(HSI48)(2) Duty Cycle - 45 - 55 % ACCHSI48_REL(3)(4) Accuracy of the HSI48 oscillator over temperature (factory calibrated) TJ=-40 to 125 °C –4.5 - 3.5 % ∆VDD(HSI48)(2)(5) HSI48 oscillator frequency drift with VDD(6) (the reference is 3.3 V) VDD=3 to 3.6 V - 0.025 0.05 % VDD=1.62 V to 3.6 V - 0.05 0.1 tsu(HSI48)(2) HSI48 oscillator start-up time - - 2.1 4.0 µs IDD(HSI48)(2) HSI48 oscillator power consumption - - 350 400 µA NT jitter(2) Next transition jitter Accumulated jitter on 28 cycles(7) - - ± 0.15 - ns PT jitter(2) Paired transition jitter Accumulated jitter on 56 cycles(7) - - ± 0.25 - ns 1. Guaranteed by test in production. 2. Guaranteed by design. 3. Guaranteed by characterization results. 4. ∆fHSI = ACCHSI48_REL + ∆VDD. |
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