STM32H723VG datasheet(110/227 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32H723xE/G

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DS13313 Rev 2

64 MHz high-speed internal RC oscillator (HSI)

∆fHSI = ACCHSI48_REL + ∆VDD.

6. These values are obtained by using the formula: (Freq(3.6 V) - Freq(3.0 V)) / Freq(3.0 V) or (Freq(3.6 V) - Freq(1.62 V)) /

Freq(1.62 V).

7. Jitter measurements are performed without clock source activated in parallel.

Table 35. HSI oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

HSI frequency

VDD=3.3 V, TJ=30 °C

63.7(2)

64.3(2)

MHz

TRIM

HSI user trimming step

Trimming is not a multiple

of 32

0.24

0.32

Trimming is 128, 256 and

384

−5.2

−1.8

Trimming is 64, 192, 320

and 448

−1.4

−0.8

Other trimming are a

multiple of 32 (not

including multiple of 64

and 128)

−0.6

−0.25

DuCy(HSI) Duty cycle

ΔVDD (HSI)

HSI oscillator frequency drift over

VDD (the reference is 3.3 V)

VDD=1.62 to 3.6 V

−0.12

0.03

ΔTEMP(HSI)

HSI oscillator frequency drift over

temperature (the reference is

64 MHz)

TJ=-20 to 105 °C

−1(3)

-1(3)

TJ=−40 to TJmax °C

−2(3)

-1(3)

tsu(HSI)

HSI oscillator start-up time

1.4

µs

tstab(HSI)

HSI oscillator stabilization time

at 1% of target frequency

at 5% of target frequency

IDD(HSI)

HSI oscillator power consumption

300

400

µA

1. Guaranteed by design unless otherwise specified.

2. Guaranteed by test in production.

3. Guaranteed by characterization results.

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