QPA2229DEVB datasheet(2/24 Pages) QORVO

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Preliminary

QPA2229D

34 – 36 GHz 13 Watt GaN Power Amplifier

Data Sheet Rev. B,Oct., 2020 | Subject to change without notice

2 of 24

www.qorvo.com

Recommended Operating Conditions

Parameter

Min

Typ.

Max Units

Pulsed RF (or VD)

DC = 50%, PW = 50 us

Drain Voltage (VD)

+28

Drain Current, Quiescent (IDQ)

150

Drain Current, RF (ID_Drive)

See plot page 14

Gate Voltage Typ. Range (VG)

−2 to -2.9

Gate Current, RF (IG_Drive)

See plot page 14

Input Power @ Saturation, (PIN)

-40 °C: 20

dBm

+25 °C: 22

+85 °C: 27

Operating Temp. Range (TBASE)

−40

+85

ºC

Electrical

specifications

are

measured

specified

test

conditions.

Specifications are not guaranteed over all

recommended operating conditions.

Absolute Maximum Ratings

Parameter

Value / Range

Drain Voltage (VD)

29.5 V

Gate Voltage Range (VG)

-6 V to 0 V

Drain Current (ID123)

2.01 A

Drain Current (ID4)

1.44 A

Gate Current (IG)

See plot page 17

Power Dissipation (PDISS), 85 °C

Pulsed, 130 W

CW, 95 W

Input Power (PIN), Pulsed RF,

50 Ω,

VD = 28 V, IDQ = 50 mA, DC = 50%,

PW = 50 us, TBASE = 125 °C

35 dBm*

Input Power (PIN), Pulsed RF, 3:1

VSWR, VD = 28 V, IDQ = 50 mA, DC =

50%, PW = 50 us, TBASE = 125 °C

30 dBm*

Mounting Temperature (30 seconds)

320 ºC

Storage Temperature

-55 to +150 ºC

Operation of this device outside the parameter ranges given

above may cause permanent damage. These are stress ratings

only, and functional operation of the device at these conditions

is not implied.

* Robustness guaranteed over 34 - 36 GHz.

Out of band

operation not recommended

Electrical Specifications

Parameter

Conditions (1) (2)

Min

Typ.

Max

Units

Operational Frequency Range

GHz

Output Power at Saturation, PSAT PIN = +27 dBm, Pulsed

41.2

dBm

Power Added Efficiency, PAE

PIN = +27 dBm, Pulsed

> 15

Large Signal Gain

PIN = +27 dBm, Pulsed

Small Signal Gain, S21

> 5

Input Return Loss, IRL

Output Return Loss, ORL

PSAT Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC; PIN = +27 dBm, Pulsed

-0.33

dBm/ºC

S21 Temperature Coefficient

TDIFF =

−40 ºC to +85 ºC, CW

-0.15

dB/ºC

Notes:

Test conditions unless otherwise noted: Pulsed RF, VD = +28 V, IDQ = 50 mA, VG = -2.5V +/- typical, DC = 50%, PW = 50 us,

TBASE

= +25 ºC, Z0 = 50 Ω

TBASE is back side of 20 mil CuMo carrier plate with AuSn solder

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