®

AS4LC256K16EO

4/11/01; V.1.1

Alliance Semiconductor

P. 3 of 25

Absolute maximum ratings

operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-

lute maximum rating conditions for extended periods may affect reliability.

DC electrical characteristics

Parameter

Symbol

Min

Max

Unit

Input voltage

-1.0

+7.0

V

Output voltage

-1.0

+7.0

V

Power supply voltage

-1.0

+7.0

V

Operating temperature

0+70

°C

Storage temperature (plastic)

-55

+150

°C

Soldering temperature

× time

–260

× 10

× sec

Power dissipation

–1

W

Short circuit output current

–50

mA

Latch-up current

200

–

mA

Parameter

Symbol

Test conditions

-35

-45

-60

Unit

Note

MinMax

MinMax

MinMax

Input leakage

current

0V

≤ V

pins not under test = 0V

-1010-10

10

-1010

µA

Output leakage

current

0V

≤ V

-1010-10

10

-1010

µA

Operating power

supply current

RAS, UCAS, LCAS, address cycling;

–70

–

60

–50

mA

1,2

TTL standby power

supply current

–200

–200

–200

µA

Average power

supply current, RAS

refresh mode

RAS cycling,

–50

–

45

–40

mA

1

EDO page mode

average power

supply current

–40

–

35

–35

mA

1,2

CMOS standby

power supply

current

–

400

–

400

–

400

µA

CAS-before-RAS

refresh power

supply current

RAS, UCAS, LCAS, cycling;

–50

–

50

–50

mA

1

Output Voltage

2.4

–

2.4

–

2.4

–

V

–0.4

–0.4

–0.4

V

Self refresh current

0.2V are open

-

400

-

400

-

400

µA