Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

MMRF1012N Datasheet(PDF) 2 Page - NXP Semiconductors

Part # MMRF1012N
Description  RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET
PDF  18 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF1012N Datasheet(HTML) 2 Page - NXP Semiconductors

  MMRF1012N Datasheet HTML 1Page - NXP Semiconductors MMRF1012N Datasheet HTML 2Page - NXP Semiconductors MMRF1012N Datasheet HTML 3Page - NXP Semiconductors MMRF1012N Datasheet HTML 4Page - NXP Semiconductors MMRF1012N Datasheet HTML 5Page - NXP Semiconductors MMRF1012N Datasheet HTML 6Page - NXP Semiconductors MMRF1012N Datasheet HTML 7Page - NXP Semiconductors MMRF1012N Datasheet HTML 8Page - NXP Semiconductors MMRF1012N Datasheet HTML 9Page - NXP Semiconductors Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 18 page
background image
2
RF Device Data
Freescale Semiconductor, Inc.
MMRF1012NR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C
Table 5. Electrical Characteristics (TA =25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
—
10
Adc
Drain--Source Breakdown Voltage
(ID =5 mA, VGS =0 Vdc)
V(BR)DSS
120
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50 Vdc, VGS =0 Vdc)
IDSS
—
—
50
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS =0 Vdc)
IDSS
—
—
2.5
mA
On Characteristics
Gate Threshold Voltage
(VDS =10 Vdc, ID =28 Adc)
VGS(th)
1
1.68
3
Vdc
Gate Quiescent Voltage
(VDD =50 Vdc, ID = 30 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.68
3.5
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =70 mAdc)
VDS(on)
—
0.26
—
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
0.13
—
pF
Output Capacitance
(VDS =50 Vdc  30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
7.3
—
pF
Input Capacitance
(VDS =50 Vdc, VGS =0 Vdc  30 mV(rms)ac @ 1 MHz)
Ciss
—
16.3
—
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50 Vdc, IDQ =30 mA, Pout = 10W,f= 220 MHz, CW
Power Gain
Gps
22.5
23.9
25.5
dB
Drain Efficiency
D
58
62
—
%
Input Return Loss
IRL
—
--14
--9
dB
ATTENTION: The MMRF1012N is a high power device and special considerations must be followed in board
design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum
allowable operating junction temperature. Refer to Freescale Application Note AN1907 (for solder reflow
mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of this device.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com