MMRF1012NR1

1

RF Device Data

Freescale Semiconductor, Inc.

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

Designed primarily for CW large--signal output and driver applications with

frequencies up to 450 MHz. Device is unmatched and is suitable for use in

aerospace and defense applications.

Power Gain — 23.9 dB

Drain Efficiency — 62%

 Capable of Handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW

Output Power

Features

 Characterized with Series Equivalent Large--Signal Impedance Parameters

 Integrated ESD Protection

 225C Capable Plastic Package

 In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

--0.5, +120

Vdc

Gate--Source Voltage

--0.5, +10

Vdc

Storage Temperature Range

-- 65 to +150

C

Case Operating Temperature

150

C

225

C

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 81C, 10 W CW

3.0

C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MMRF1012N

Rev. 0, 7/2014

Freescale Semiconductor

Technical Data

10--450 MHz, 10 W, 50 V

BROADBAND

RF POWER MOSFET

MMRF1012NR1

TO--270--2

PLASTIC

Note: Exposed backside of the package is

the source terminal for the transistor.

(Top View)

Drain

21

Figure 1. Pin Connections

Gate

 Freescale Semiconductor, Inc., 2014. All rights reserved.