MMRF1012N datasheet(5/18 Pages) NXP

5 / 18 page

MMRF1012NR1

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS

0.1

100

020

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 4. Capacitance versus Drain--Source Voltage

Ciss

0.1

100

TC =25C

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 5. DC Safe Operating Area

0.35

DRAIN VOLTAGE (VOLTS)

120

Figure 6. DC Drain Current versus Drain Voltage

IDQ =45 mA

0.1

Pout, OUTPUT POWER (WATTS) CW

Figure 7. CW Power Gain versus Output Power

VDD =50 Vdc

f1 = 220 MHz

100

VGS =3 V

Coss

Crss

100

2.75 V

2.63 V

2.5 V

2.25 V

38 mA

--55

--20

Pout, OUTPUT POWER (WATTS) PEP

--25

--30

--35

--40

Figure 8. Third Order Intermodulation Distortion

versus Output Power

VDD =50 Vdc

f1 = 220 MHz, f2 = 220.1 MHz

Two--Tone Measurements

100 kHz Tone Spacing

--45

--50

Pin, INPUT POWER (dBm)

Figure 9. CW Output Power versus Input Power

P3dB = 40.87 dBm (12.2 W)

Actual

Ideal

P1dB = 40.43 dBm (11.04 W)

VDD =50 Vdc,IDQ =30 mA

f = 220 MHz

200

0.3

0.25

0.2

0.15

0.1

0.05

120

30 mA

23 mA

15 mA

IDQ =45 mA

38 mA

IDQ =60 mA

15 mA

23 mA

38 mA

45 mA

30 mA

Measured with 30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

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